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PDF 2N4920 Data sheet ( Hoja de datos )
| Número de pieza | 2N4920 | |
| Descripción | Medium Power Transistor | |
| Fabricantes | Multicomp | |
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Medium Power Transistor
Description:
Medium Power Plastic PNP, TO-126, Silicon Transistor.
Designed for driver circuits, switching, and amplifier applications.
Features:
• Low Saturation Voltage: VCE(sat) 0.6V DC IC = 1A
• Excellent Power Dissipation Due to Thermopad Construction
PD = 30 @ TC = 25°C
Absolute Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Continuous Collector Current
Base Current
Total Device Dissipation at Tc = 25°C
Derate above 25°C
Operating and Storage
Junction Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
IB
PD
Rating
80
80
5
1
1
30
0.24
Unit
V
A
W
mW/°C
Tj, Tstg -65 to +150
°C
PNP
Electrical Characteristics (Ta = 25°C unless otherwise specified)
Parameter
OFF Characteristics
Collector - Emitter Breakdown Voltage (Note 1)
Collector Cut-Off Current
Emitter Cut-Off Current
ON Characteristics (Note 1)
Symbol
V(BR)CEO
ICEX
ICEO
ICBO
IEBO
Test Conditions
IC=100mA, IB=0
VCE=80V, VEB(off)=1.5V
VCB=40V, IB=0
VEB=80V, IE=0
VEB=5V, IC=0
DC Current Gain
Collector - Emitter Saturation Voltage
Base-Emitter Saturation Voltage
hFE
VCE(sat)
VBE(on)
VBE(sat)
VCE=1V, IC=50mA
VCE=1V, IC=1,500mA
VCE=1V, IC=1A
IC=1A, IB=100mA
IC=1A, IB=1V
IC=1A, IB=100mA
Min. Max. Unit
80 -
V
-1
- 0.5
mA
- 0.1
-1
40 -
30 150
10 -
- 0.6
- 1.3
- 1.3
-
-
-
V
www.element14.com
www.farnell.com
www.newark.com
Page <1>
23/04/13 V1.0
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2N4920.PDF ] | |
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