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Numéro de référence | 2N6476 | ||
Description | Bipolar Transistor | ||
Fabricant | Multicomp | ||
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1 Page
Medium Power Transistor
Description:
The 2N6476, PNP General Purpose, medium power silicon transistor in a TO-220 type package
designed for switching and amplifier applications. This devices is especially designed for series
and shunt regulators and as a driver and output stage of high-fidelity amplifiers.
Features:
• Low Saturation Voltage
Maximum Ratings:
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage (RBB = 1≤00Ω, VBB = 0)
Collector-Emitter Voltage
Emitter Base Current
Continuous Collector Current (TC% + 106°C)
Continuous Base Current (TC% + 130°C)
Total Device Dissipation -(TC = +100°C),
Derate Linearly Above 100°C
Total Device Dissipation -(TC = +25°C),
Derate Linearly Above 25°C
Total Device Dissipation -(TA = +25°C),
Derate Linearly Above 25°C
Operating Junction Temperature Range
Storage Temperature Range,
Lead Temperature (During Soldering, 1/8"
(3.17mm) from case, 10sec max)
Symbol
VCBO
VCEX
VCEO
VEBO
IC
IB
PD
Topr
Tstg
TL
Rating
130
120
5
4
120
16
0.32
40
0.32
1.8
0.0144
-65 to +150
+235
www.element14.com
www.farnell.com
www.newark.com
Page <1>
Unit
V
A
mA
W
W/°C
°C
°C
23/04/13 V1.0
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Pages | Pages 2 | ||
Télécharger | [ 2N6476 ] |
No | Description détaillée | Fabricant |
2N6470 | (2N6470 - 2N6472) Silicon Power Transistor | SavantIC |
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2N6471 | (2N6470 - 2N6472) Silicon Power Transistor | SavantIC |
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