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2N6124 fiches techniques PDF

Multicomp - Bipolar Transistor

Numéro de référence 2N6124
Description Bipolar Transistor
Fabricant Multicomp 
Logo Multicomp 





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2N6124 fiche technique
Transistor
General Purpose
Description:
A Silicon epitaxial PNP Darlington transistor in a TO-220 type Case designed
for general-purpose amplifier and Low speed switching circuits.
Features:
•  High DC Current Gain
•  Collector-Emitter Sustaining Voltage VCEO(SUS)=100V Min.
•  Monolithic Construction With Built-in Base-Emitter Shunt Resistors
Pin Configuration:
1. Emitter
2. Base
3. Collector
Maximum Ratings:
Characteristic
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current -Continuous
-Peak
Base Current
Total Device Dissipation -(TC = +25°C),
Derate Above 25°C
Total Device Dissipation -(TA = +25°C),
Derate Above 25°C
Operating Junction Temperature Range
Storage Temperature Range,
Thermal Resistance, Junction-to-Case,
Thermal Resistance, Junction-to-Ambient,
Symbol
VCEO
VCB
VEB
IC
IB
PD
TJ
Tstg
RthJC
RthJA
Rating
80
5
8
16
120
75
0.6
2.2
0.0175
-65 to +150
1.67
57
Unit
V
A
mA
W
W/°C
°C
°C/W
www.element14.com
www.farnell.com
www.newark.com
Page <1>
23/04/13 V1.0

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