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PDF 2N5679 Data sheet ( Hoja de datos )

Número de pieza 2N5679
Descripción COMPLEMENTARY SILICON POWER TRANSISTORS
Fabricantes Central Semiconductor 
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2N5679 2N5680 PNP
2N5681 2N5682 NPN
COMPLEMENTARY
SILICON POWER TRANSISTORS
TO-39 CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N5679, 2N5681
series devices are complementary silicon power
transistors, manufactured by the epitaxial planar
process, designed for general purpose amplifier
and switching applications where high voltages are
required.
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Continuous Collector Current
IC
Continuous Base Current
IB
Power Dissipation
PD
Power Dissipation (TC=25°C)
PD
Operating and Storage Junction Temperature
TJ, Tstg
Thermal Resistance
ΘJA
Thermal Resistance
ΘJC
2N5679
2N5681
100
2N5680
2N5682
120
100 120
4.0
1.0
0.5
1.0
10
-65 to +200
175
17.5
UNITS
V
V
V
A
A
W
W
°C
°C/W
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICBO
VCB=Rated VCBO
ICEV
VCE=Rated VCEO, VEB=1.5V
ICEV
VCE=Rated VCEO, VEB=1.5V, TC=150°C
ICEO
VCE=70V (2N5679, 2N5681)
ICEO
VCE=80V (2N5680, 2N5682)
IEBO
VEB=4.0V
BVCEO
IC=10mA (2N5679, 2N5681)
100
BVCEO
IC=10mA (2N5680, 2N5682)
120
VCE(SAT) IC=250mA, IB=25mA
VCE(SAT) IC=500mA, IB=50mA
VCE(SAT) IC=1.0A, IB=200mA
VBE(ON)
VCE=2.0V IC=250mA
hFE VCE=2.0V, IC=250mA
40
hFE VCE=2.0V, IC=1.0A
5.0
hfe VCE=1.5V, IC=0.2A, f=1.0kHz
40
fT VCE=10V, IC=100mA, f=10MHz
30
Cob VCB=20V, IE=0, f=1.0MHz
MAX
1.0
1.0
1.0
10
10
1.0
0.6
1.0
2.0
1.0
150
50
UNITS
µA
µA
mA
µA
µA
µA
V
V
V
V
V
V
MHz
pF
R2 (2-December 2013)

1 page




2N5679 pdf
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w w w. c e n t r a l s e m i . c o m
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