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PDF 2N5320 Data sheet ( Hoja de datos )
| Número de pieza | 2N5320 | |
| Descripción | COMPLEMENTARY SILICON SWITCHING TRANSISTORS | |
| Fabricantes | Central Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2N5320 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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2N5320 2N5321 NPN
2N5322 2N5323 PNP
COMPLEMENTARY SILICON
SWITCHING TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N5320, 2N5322
series types are complementary silicon power
transistors manufactured by the epitaxial planar process,
designed for amplifier and switching applications.
MARKING: FULL PART NUMBER
TO-39 CASE
MAXIMUM RATINGS: (TC=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Continuous Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
Thermal Resistance
SYMBOL
VCBO
VCEV
VCEO
VEBO
IC
IB
PD
TJ, Tstg
ΘJA
ΘJC
2N5320
2N5322
100
2N5321
2N5323
75
100 75
75 50
6.0 5.0
2.0
1.0
10
-65 to +200
175
17.5
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
2N5320
2N5322
SYMBOL TEST CONDITIONS
MIN MAX
ICBO
VCB=80V
- 0.5
ICBO
VCB=60V
--
IEBO
VEB=5.0V
- 0.1
IEBO
VEB=4.0V
--
BVCEV
IC=100μA, VBE=1.5V
100 -
BVCEO
IC=10mA
75 -
BVEBO
IE=100μA
6.0 -
VCE(SAT) IC=500mA, IB=50mA (2N5320)
- 0.5
VCE(SAT) IC=500mA, IB=50mA (2N5321)
--
VCE(SAT) IC=500mA, IB=50mA (2N5322)
- 0.7
VCE(SAT) IC=500mA, IB=50mA (2N5323)
--
VBE(ON)
VCE=4.0V, IC=500mA
- 1.1
hFE VCE=4.0V, IC=500mA
30 175
hFE VCE=2.0V, IC=1.0A
10 -
fT
VCE=4.0V, IC=50mA, f=10MHz
50 -
2N5321
2N5323
MIN MAX
--
- 5.0
--
- 0.5
75 -
50 -
5.0 -
--
- 0.8
--
- 1.2
- 1.4
40 250
--
50 -
UNITS
V
V
V
V
A
A
W
°C
°C/W
°C/W
UNITS
μA
μA
μA
μA
V
V
V
V
V
V
V
V
MHz
R5 (11-May 2017)
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2N5320.PDF ] | |
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