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Numéro de référence | 2N5231 | ||
Description | LOW POWER CHOPPER TRANSISTOR | ||
Fabricant | Motorola Semiconductors | ||
Logo | |||
1 Page
MAXIMUM RATINGS
Rating
Emitter-Collector Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
Total Device Dissipation
@ Ta = 25°C
Derate above 25°C
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol 2N5229 2N5230 2N5231
VECO
v CBO
v EBO
"C
PD
10
15
15
20
30
30
50
0.5
2.86
30
50
50
PD
TJ- Tstg
2.0
12
- 65 to + 200
Unit
Vdc
Vdc
Vdc
mAdc
Watt
mW/°C
Watts
mW/°C
°C
2N5229
2N5230
2N5231
CASE 26-03, STYLE 1
TO-46 (TO-206AB)
LOW POWER CHOPPER
TRANSISTOR
PNP SILICON
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Emitter-Collector Breakdown Voltage
E(l = 10 /iAdc, Bl = 0)
2N5229
2N5230
2N5231
Collector-Base Breakdown Voltage
C(l = 10 /nAdc, El = 0)
2N5229
2N5230
2N5231
Emitter-Base Breakdown Voltage
E(l = 10 ^Adc, C| = 0)
2N5229
2N5230
2N5231
Collector Cutoff Current
(Vcb = 12 Vdc, l£ = 0)
(VC B = 25 Vdc, El = 0)
(Vcb = 40 Vdc, l£ = 0)
Emitter Cutoff Current
(V EB = 12 Vdc, lc = 0)
(V EB = 25 Vdc, lc = 0)
(V EB = 40 Vdc, lc = 0)
ON CHARACTERISTICS
DC Current Gain
(lC = 100 A*Adc, VCE = 1.0 Vdc)
(lC = 200 ^Adc, Vc E = 0.5 Vdc) (Inverted Connection)
Offset Voltage
B<I = 100 /*Adc, El = 0)
2N5229
2N5230
2N5231
2N5229
2N5230
2N5231
2N5229, 2N5230,
2N5231
(IB = 1.0 mAdc, El = 0)
SMALL-SIGNAL CHARACTERISTICS
Collector-Base Capacitance
(Vcb = 10 Vdc, El = 0, f = 140 kHz)
Emitter-Base Capacitance
(V EB = 10 Vdc, cl = 0, f = 140 kHz)
Small Signal Current Gain
(lC = 1.0 mAdc, Vce = 5.0 Vdc, f = 4.0 MHz)
2N5229,
2N5230, 2N5231
Symbol
v (BR)ECO
v (BR)CBO
v (BR)EBO
Icbo
Min
10
20
30
15
30
50
15
30
50
-
'EBO
-
hFE
v EC(ofs)
Ccb
c eb
h fe
50
15
—
—
—
—
—
—
2.0
Max
-
-
-
1.0
1.0
1.0
1.0
1.0
1.0
—
—
0.5
0.8
0.8
1.0
5.0
4.0
—
Unit
Vdc
Vdc
Vdc
nAdc
nAdc
—
mVdc
PF
pF
—
4-183
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Pages | Pages 3 | ||
Télécharger | [ 2N5231 ] |
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