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2N3735 fiches techniques PDF

TT - GENERAL PURPOSE SILICON NPN TRANSISTOR

Numéro de référence 2N3735
Description GENERAL PURPOSE SILICON NPN TRANSISTOR
Fabricant TT 
Logo TT 





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2N3735 fiche technique
GENERAL PURPOSE SILICON
NPN TRANSISTOR
2N3734 / 2N3735
Hermetic TO-39 Metal Package
General purpose amplifier and switching applications
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
Symbols Parameters
2N3734
2N3735
VCBO
Collector – Base Voltage
50V 75V
VCEO
Collector – Emitter Voltage
30V 50V
VEBO
Emitter – Base Voltage
5V
IC Collector Current – Continuous (TC = 25°C)
PD Total Power Dissipation at TA = 25°C
1.5A
1.0W
De-rate Above 25°C
5.7mW/°C
PD Total Power Dissipation atTC = 25°C
2.9W
De-rate Above 25°C
16.6mW/°C
TJ Junction Temperature Range
-65 to +200°C
Tstg Storage Temperature Range
-65 to +200°C
THERMAL PROPERTIES
Symbols Parameters
RθJA
Thermal Resistance, Junction To Ambient
RθJC
Thermal Resistance, Junction To Case
Max.
175
60
Units
°C/W
°C/W
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com
Document Number 9588
Issue 1
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