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Microsemi - NPN SILICON SWITCHING TRANSISTOR

Numéro de référence 2N3735
Description NPN SILICON SWITCHING TRANSISTOR
Fabricant Microsemi 
Logo Microsemi 





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2N3735 fiche technique
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
TECHNICAL DATA SHEET
NPN SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/395
DEVICES
2N3735
2N3737
2N3735L
2N3737UB
LEVELS
JAN
JANTX
JANTXV
JANS
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Symbol
Min.
Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
@ TA = +25°C
Total Power Dissipation
@ TC = +25°C
2N3735, 2N3735L
2N3737
2N3737UB
2N3735, 2N3735L
2N3737
2N3737UB
VCEO
VCBO
VEBO
IC
PT
PT
40
75
5
1.5
1.0 (1)
0.5 (3)
0.5 (5)
2.9 (2)
1.9 (4)
N/A
Vdc
Vdc
Vdc
Adc
W
W
W
W
W
W
Operating & Storage Junction Temperature Range
TJ, Tstg
-65 to +200
°C
* Electrical characteristics for “L” suffix devices are identical to the “non L” corresponding
devices.
(1) Derate linearly at 5.71 mW/°C above TA = +25°C
(2) Derate linearly at 16.6 mW/°C above TA = +25°C
(3) Derate linearly at 2.86 mW/°C above TA = +25°C
(4) Derate linearly at 11.3 mW/°C above TA = +25°C
(5) Derate linearly at 3.07 mW/°C above TA = +25°C
(6) TA = +55°C for UB on printed circuit board (PCB). PCB = FR4 .0625 inch (1.59MM) 1
– layer 1 oz Cu, horizontal, still air, pads (UB) = .034 inch (0.86 mm) x .048 inch (1.2
mm), RθJA with a defined thermal resistance condition included is measured at PT =
500mW.
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
IC = 10mAdc
Collector-Base Cutoff Current
VCB = 75Vdc
VCB = 30Vd
Symbol Min. Max. Unit
V(BR)CEO
ICBO
40
Vdc
10 μAdc
250 ηAdc
T4-LDS-0173 Rev. 1 (101069)
TO-5*
2N3735L
TO-39* (TO-205AD)
2N3735
3 PIN
2N3737UB
TO-46 (TO-206AB)
2N3737
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