|
|
Número de pieza | 2N3508 | |
Descripción | SWITCHING TRANSISTOR | |
Fabricantes | Motorola Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 2N3508 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
No Preview Available ! MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current (10 /xs pulse) (Peak)
@Total Device Dissipation Ta = 25°C
Derate above 25°C
@Total Device Dissipation Tc = 25°C
Derate above 2S°C
Operating and Storage Temperature
Temperature Range
Symbol
VCEO
VCES
VCBO
v EBO
ic
PD
Pd
Tj. Tstg
Value
20
40
40
6.0
500
0.40
2.29
2.0
11.43
- 65 to + 200
Unit
Vdc
Vdc
Vdc
Vdc
mA
Watt
mW/°C
Watts
mW/°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Symbol
R<uc
R&JA
Max
0.0875
0.438
Unit
°c/w
°c/w
ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
(IC = 10 /<Adc, Bl = 0)
Collector-Emitter Breakdown Voltage (1)
c(l = 10 mAdc)
Collector-Emitter Voltage
(IC = 10 /iAdc, Bl = 0)
Emitter-Base Breakdown Voltage
(IE = 10 /xAdc, lc = 0)
Collector Cutoff Current
(VC E = 20 Vdc, VEB(off) = 3-0 Vdc)
Collector Cutoff Current
(VC B = 20 Vdc)
(Vcb = 20 Vdc, Ta = 150°C)
Both Types
2N3508
2N3509
Base Cutoff Current
(VCe = 20 Vdc, VEB(off) - 3.0 Vdc)
ON CHARACTERISTICS
DC Current Gain
c(l = 10 mAdc, Vce = 1-0 Vdc)
2N3508
2N3509
C(l = 10 mAdc, VCe = 10 Vdc, Ta = -55°C)
2N3508
2N3509
(IC = 100 mAdc, Vce = 10 vdc)
Collector-Emitter Saturation Voltage (1)
(lC = 10 mAdc, Ib = 1.0 mAdc)
c(l = 100 mAdc, Ib = 10 mAdc)
Base-Emitter Saturation Voltage (1)
(lC = 10 mAdc, Ib = 1.0 mAdc)
(lC = 100 mAdc, Ib = 10 mAdc)
SMALL-SIGNAL CHARACTERISTICS
Output Capacitance
(VCB = 5.0 Vdc, El = 0, f = 140 kHz)
2N3508
2N3509
2N3508
2N3509
CASE 26, STYLE 1
TO-46 (TO-206AB)
SWITCHING TRANSISTOR
NPN SILICON
Refer to 2N2368 for graphs.
Symbol
v (BR)CBO
v (BR)CEO
V (BR)CES
v (BR)EBO
>CEX
!CBO
20
•BL
Max
Unit
Vdc
Vdc
0.2 /xAdc
yxAdc
0.2
30
50
nAdc
hFE
VcE(sat)
40
100
20
40
20
30
VBE(sat)
C bo
0.70
0.8
120
300
0.25
0.45
0.85
1.4
Vdc
PF
4-101
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet 2N3508.PDF ] |
Número de pieza | Descripción | Fabricantes |
2N3500 | Type 2N3500 Geometry 5620 Polarity NPN | Semicoa Semiconductor |
2N3500 | GENERAL PURPOSE TRANSISTOR (NPN SILICON) | Boca Semiconductor Corporation |
2N3500 | NPN SILICON PLANAR RF TRANSISTORS | CDIL |
2N3500 | NPN SILICON SWITCHING TRANSISTOR | Microsemi |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |