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Motorola Semiconductors - DARLINGTON TRANSISTOR

Numéro de référence 2N2723
Description DARLINGTON TRANSISTOR
Fabricant Motorola Semiconductors 
Logo Motorola Semiconductors 





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2N2723 fiche technique
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
(Base 1 and Base 2 open)
Collector-Base Voltage
Emitter-Base Voltage
Collector Current Continuous
@Total Device Dissipation Ta = 25°C
Derate above 25°C
Total Device Dissipation > Tc = 25X
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
VCE20
VCB1
V E2B1
PD
PD
Tj, Tstg
Value
Vdc
40
0.5
2.9
1.8
10.5
-65 to +200
Vdc
Vdc
Adc
Watt
mW/°C
Watts
mW/°C
2N2723
CASE 20-03, STYLE 8
TO 72 (TO-206AF)
DARLINGTON TRANSISTOR
NPN SILICON
ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltaged)
c(l = 10 mAdc, lei = 0)
Collector-Base Breakdown Voltage
C(I = 10 /uAdc, lE2 = 0)
Emitter-Base Breakdown Voltage
(l E2 = 10 ;uAdc, lc = 0)
Collector Cutoff Current
(VCB1 = 60 Vdc, = 0)
(VCBI
=
60
Vdc
>
'E
=
°- TA
150°C)
Emitter Cutoff Current
(V B 1E2 = 10 Vdc, Cl = 0)
ON CHARACTERISTICS
DC Current Gain
(lC = 10 mAdc, VcE2
5.0 Vdc, Ib2 = 0)
Collector-Emitter Saturation Voltage
c(| = 10 mAdc, Ibi = 1-0 mAdc)
Base-Emitter Saturation Voltage,
C(I = 10 rnAdc, Ib1 = 1.0 mAdc)
SMALL-SIGNAL CHARACTERISTICS
Output Capacitance
(VCB1 = 10Vdc, l E 2 = 0- f
140 kHz)
Small-Signal Current Gain
(lC
=
10 mAdc, VcE2
=
50 vdc f=
-
10 kHz)
Current Gain Bandwidth Product (Each Unit)
C(l = 10 mAdc, VCEI ° f VCE2 = 1 ° Vdc, f = 20 MHz)
Noise Figure (Input Stage Only)
C(I = 50 /xAdc, VCE = 50 Vdc- R S = 30 kohms.f = BW1.0 kHz,
(1) Pulse Test: Pulse Width =s 12 ms, Duty Cycle « 2.0%.
100 Hz)
Symbol
V(BR)CE20
V(BR)CB10
V(BR)E2B10
!CB10
'E2B10
hFE
VcE2(sat)
VBE2(sat)
C b1o
Ihfe
NF
60
80
5.0
Max
0.01
10
10
Unit
Vdc
Vdc
Vdc
uAdc
nAdc
10,000
1.0
1.7
Vdc
Vdc
10
15,000
pF
10
5-13

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