DataSheetWiki


2N2652A fiches techniques PDF

Motorola Semiconductors - DUAL AMPLIFIER TRANSISTOR

Numéro de référence 2N2652A
Description DUAL AMPLIFIER TRANSISTOR
Fabricant Motorola Semiconductors 
Logo Motorola Semiconductors 





1 Page

No Preview Available !





2N2652A fiche technique
2N2652,A
CASE 654-07, STYLE 1
DUAL
AMPLIFIER TRANSISTOR
NPN SILICON
Refer to 2N2060.A for graphs.
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current Continuous
@Total Device Dissipation Ta = 25°C
Derate above 25°C
@Total Device Dissipation Trj = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
Value
Unit
VCEO
60
Vdc
VCBO
100
Vdc
VEBO
7.0
Vdc
'C 500 mAdc
One Die Both Die
PD 0.3
0.6 Watt
1.72
3.43 mW/°C
Pd 1.0
2.0 Watts
5.7 11.4 mW/°C
TJ- Tstg
- 65 to + 200
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
L Characteristic
OFF CHARACTERISTICS
Symbol
mACollector-Emitter Breakdown VoltageQ) (Ig = 20
dc, lg = 0)
Collector-Base Breakdown Voltage dc = 100 ^Adc, Ie = 0)
Emitter-Base Breakdown Voltage
100 MAdc, lc = 0)
Collector Cutoff Current (VC B
(VC B
50 Vdc, = 0)
50 Vdc, Ig = 0, Ta = 150°C)
V(BR)CEO
v(BR)CBO
v (BR)EBO
'CBO
Emitter Cutoff Current (VgE = 5.0 Vdc, lc = 0)
ON CHARACTERISTICS
2N2652
!EBO
DC Current Gain
(Iq = 100 /nAdc, Vce = 5.0 Vdc)
dC = 1.0 mAdc, Vce = 5.0 Vdc)
PC = 1-0 mAdc, Vce = 5.0 Vdc, Ta = - 55"C)
hFE
Collector-Emitter Saturation Voltage (lc = 50 mAdc, \g = 5.0 mAdc)
Base-Emitter Saturation Voltage (lc = 50 mAdc, Ig = 5.0 mAdc)
SMALL-SIGNAL CHARACTERISTICS
Current-Gain Bandwidth Product dc = 50 mAdc, Vce = 1 ° Vdc, f = 20 MHz)
Output Capacitance (Vcb = 10 Vdc, lg = 0, f = 1.0 MHz)
Input Capacitance (Vbe = 0, 0.5 Vdc, cl = 0, f = 1.0 MHz)
Input Impedance dc = 1.0 mAdc, Vce = 5.0 Vdc, f = 1.0 kHz)
vCE(sat)
v BE(sat)
Cobo
Qbo
Input Impedance dc = 1.0 mAdc, Vcb = 5.0 Vdc, f = 1.0 kHz)
Small-Signal Current Gain (lc = 1.0 mAdc, Vce = 5.0 Vdc, f = 1.0 kHz)
Output Admittance dc = 1.0 mAdc, Vce = 5.0 Vdc, f = 1.0 kHz)
"ib
Noise Figure
dC = 0-3 mAdc, Vce = 10 Vdc, Rs = 610 ohms, B. W. = 1.0 Hz, f
MATCHING CHARACTERISTICS
1.0 kHz)
DC Current Gain Ratio(2) (lc = 100 /xAdc, Vce
dC = 1.0 mAdc, Vce
5.0 Vdc)
5.0 Vdc)
2N2652
2N2652
n FE1 /r"FE2
Base-Emitter Voltage Differential dc = 1 00 fiAdc, Vqe
dC = 1.0 mAdc, Vce
5.0 Vdc)
5.0 Vdc)
l vBE1-VBE2l
Base-Emitter Voltage Differential Gradient
dC - 100 ^Adc, V C e = 5.0 Vdc, TA = -55 to + 125°C)
A(V B E1-VBE2>
ATA
(1) Pulse Test: Pulse Width =s 300 ^s, Duty Cycle « 2.0%.
(2) The lowest of the two hpE readings is taken as hpEl for the purpose of measurement.
Min
60
100
7.0
35
50
15
60
1.0
20
50
0.85
0.85
Max
0.010
15
Vdc
Vdc
Vdc
ytiAdC
MAdc
200
1.2
0.9
Vdc
MHz
15 pF
85 pF
10.5
kohms
35 ohms
300
Mmhos
8.0 dB
1.0
1.0
3.0
3.0
/mV/°C
5-10

PagesPages 1
Télécharger [ 2N2652A ]


Fiche technique recommandé

No Description détaillée Fabricant
2N2652 DUAL AMPLIFIER TRANSISTOR Motorola Semiconductors
Motorola Semiconductors
2N2652A DUAL AMPLIFIER TRANSISTOR Motorola Semiconductors
Motorola Semiconductors

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche