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PDF BC639 Data sheet ( Hoja de datos )
| Número de pieza | BC639 | |
| Descripción | NPN Type Plastic Encapsulate Transistors | |
| Fabricantes | SeCoS | |
| Logotipo |  |
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Elektronische Bauelemente
BC635 / BC637 / BC639
NPN Type
Plastic Encapsulated Transistor
FEATURE
High current transistor
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
TO-92
4.55±0.2
3.5±0.2
0.4 6+–00..11
0.43+–00..0078
(1.27 Typ).
123
1.25+–00..22
2.54±0.1
1: Emitter
2: Collector
3: Base
MAXIMUM RATINGS (TA=25 oC unless otherwise specified)
PARAMETERS
SYMBOLS
Collector - Emitter Voltage
Collector - Base Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
BC635
BC637
BC639
BC635
BC637
BC639
VCEO
VCBO
VEBO
IC
PC
TJ,TSTG
ELECTRICAL CHARACTERISoTICS (TA=25 oC unless otherwise specified)
VALUES
45
60
80
45
60
100
5
1
0.625
150, -65 ~ 150
UNIT
V
V
V
V
V
V
V
A
W
oC
PARAMETERS
Collector - emitter breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector - emitter saturation voltage
Base - emitter voltage
Transition frequency
CLASSIFICATION OF hFE(2)
SYMBOL TEST CONDITIONS
MIN
V(BR)CEO
I CBO
I EBO
hFE(1)
hFE(2)
hFE(3)
VCE(sat)
VBE
fT
IC=10mA, IB=0
BC635
BC637
VCB=30V, IE=0
BC639
VEB=5V, IB=0
VCE=2V, IC=5mA
VCE=2V, IC=150mA BC635
BC637-10/BC639-10
BC637-16/BC639-16
VCE=2V, IC=500mA
IC=500mA, IB=50mA
VCE=2V, IC=500mA
VCE=5V, IC=10mA, f=50MHz
45
60
80
25
40
63
100
25
TYP MAX UNIT
V
V
V
0.1 µA
0.1 µA
250
160
250
0.5 V
1V
100 MHz
RANK
RANGE
BC635
40-250
BC637-10, BC639-10
63-160
BC637-16, BC639-16
100-250
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 1 of 2
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| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet BC639.PDF ] | |
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