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Numéro de référence | BC637 | ||
Description | EPITAXIAL PLANAR NPN TRANSISTOR | ||
Fabricant | KEC | ||
Logo | |||
1 Page
SEMICONDUCTOR
TECHNICAL DATA
HIGH CURRENT TRANSISTORS.
FEATURES
ᴌComplementary to BC638.
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
VCBO
VCEO
VEBO
IC
PC
Tj
Storage Temperature
Tstg
RATING
60
60
5
500
625
150
-55ᴕ150
UNIT
V
V
V
mA
mW
ᴱ
ᴱ
BC637
EPITAXIAL PLANAR NPN TRANSISTOR
BC
K
E
G
D
H
FF
1 23
N DIM MILLIMETERS
A 4.70 MAX
B 4.80 MAX
C 3.70 MAX
D 0.45
E 1.00
F 1.27
G 0.85
H 0.45
J 14.00 +_0.50
K 0.55 MAX
L 2.30
M 0.45 MAX
N 1.00
1. EMITTER
2. COLLECTOR
3. BASE
TO-92
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Collector-Emitter Breakdown Voltage *
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
Input Capacitance
ICBO
V(BR)CEO
V(BR)CBO
V(BR)EBO
hFE
VCE(sat)
VBE
fT
Cib
Collector Output Capacitance
Cob
* Pulse Test : Pulse Widthᴪ300ỌS, Duty Cycle 2.0%
TEST CONDITION
VCB=30V, IE=0
IC=10mA, IB=0
IC=100ỌA, IE=0
IE=10ỌA, IC=0
VCE=2V, IC=150mA
IC=500mA, IB=50mA
VCE=2V, IC=500mA
VCE=2V, IC=50mA, f=100MHz
VEB=0.5V, IC=0, f=1MHz
VCB=10V, IE=0, f=1MHz
MIN.
-
60
60
5.0
40
-
-
-
-
-
TYP.
-
-
-
-
-
-
-
200
50
7.0
MAX.
100
-
-
-
160
0.5
1.0
-
-
-
UNIT
nA
V
V
V
V
V
MHz
pF
pF
2000. 10. 2
Revision No : 0
1/1
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Pages | Pages 1 | ||
Télécharger | [ BC637 ] |
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