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Motorola Semiconductors - DARLINGTON TRANSISTORS

Numéro de référence BC617
Description DARLINGTON TRANSISTORS
Fabricant Motorola Semiconductors 
Logo Motorola Semiconductors 





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BC617 fiche technique
MAXIMUM RATINGS
Rating
Symbol
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
@Total Device Dissipation Ta = 25°C
Derate above 25°C
@Total Device Dissipation Tc = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
VCEO
VCBO
VEBO
ic
PD
pd
Tj,T stg
Symbol
RfljC
RflJC
BC BC
617 618
40 55
50 80
12
1.0
625
5.0
1.5
12
-55 to +150
Max
83.3
200
Unit
Vdc
Vdc
Vdc
Adc
mW
mW/°C
Watt
mW/°C
°C
Unit
°C/W
°c/w
BC617
BC618
CASE 29-02, STYLE 17
TO-92 (TO-226AA)
DARLINGTON TRANSISTORS
NPN SILICON
Refer to 2N6426 for graphs.
ELECTRICAL CHARACTERISTICS (Ta = 25 °C unless otherwise noted)
Characteristic
Symbol
Min.
Typ.
| ||
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(IC = 10 mAdc, VBE = 0)
BC617
BC618
V(BR)CEO
40
55
-
Collector-Base Breakdown Voltage
(IC = 100(iAdc, IE = 0)
BC617
BC618
V(BR)CBO
50
80
Emitter-Base Breakdown Voltage
(If = 10 uAdc, lc = 0)
Collector Cutoff Current
(VcE = 40 Vdc, VBE = 0)
(VcE = 60 Vdc, VBE = 0)
Collector Cutoff Current
(VcB = 40 Vdc, Ie = 0)
(VCB = 6C- Vdc, Ie = 0)
Emitter Cutoff Current
(Vbe = 10 Vdc, lc = 0)
ON CHARACTERISTICS
Both Types
BC617
BC618
BC617
BC618
Both Types
V(BR)EB0
ices
ICBO
lEBO
12
-
-
-
Collector-Emitter Saturation Voltage
VCE(sat)
Base-Emitter Saturation Voltage
VBE(sat)
Max.
__
50
50
50
50
50
1.1
1.6
Vdc
Vdc
Vdc
nAdc
nAdc
nAdc
V
V
Current Gain
dC = 100 nA, VcE = 5 V)
C(l = 10 mA, VcE = 5 V)
(lC = 200 mA, VcE = 5 V)
dC = 1 A, VcE = 5 V)
DYNAMIC CHARACTERISTICS
Current gain - Bandwidth product
5 O O m A VCE ' 5V
!^, O M V,
'
Output Capacitance
(VcB = 10 V, Ie = 0, P = 1 MHz)
BC617
BC618
BC617
BC618
BC617
BC618
BC617
BC618
*""»-
hFE
4000
2000
10000
4000
20000
10000
10000
4 000
fT
150
Cob
70000
50000
MHz
pF
4.5
2-117

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