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PDF BC586 Data sheet ( Hoja de datos )
| Número de pieza | BC586 | |
| Descripción | SILICON TEMPERATURE SENSORS | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BC586 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
@TaTotal Device Dissipation
= 25°C
Derate above 25°C
Total Device Dissipation @Tc = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Symbol
VCEO
VCBO
VEBO
ic
PD
pd
Tj, Tgtg
Symbol
R0JC
R#JC
Value
20
25
5.0
50
350
2.8
1.0
8.0
-55 to +150
Max
125
357
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Watt
mW/°C
°C
Unit
°C/W
°c/w
BC585 (NPN)
BC586 (PNP)
CASE 29-02, STYLE 17
TO-92 (TO-226AA)
SILICON TEMPERATURE
SENSORS
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(IC = 10 mA, Ib = 0)
Collector-Base Breakdown Voltage
C(l = 10uA, IE = 0)
Emitter-Base Breakdown Voltage
E(l = 10uA, Ic = 0)
Collector Cutoff Current
(V C B = 15 V, IE = 0)
Emitter Cutoff Current
(Veb = 4 V, Ic = 0)
DC Current Gain
C(l = 0.5 mA, VCE = 5 V)
Base-Emitter On Voltage
(lC = 0.5 mA, VCE = 5 V)
BVCE0
BVCBO
BVEBO
ICB0
lEBO
hFE
VBE(on)
Thermal Time Constant in
Oil Bath
T
Min.
20
25
5
120
0.57
Typ.
10
Max.
100
100
320
0.69
Unit
Vdc
Vdc
Vdc
nAdc
nAdc
Vdc
sec
2-115
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet BC586.PDF ] | |
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