PDF BC558 Data sheet ( Hoja de datos )

Número de pieza	BC558
Descripción	Amplifier Transistors
Fabricantes	Motorola Semiconductors
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No Preview Available ! MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors PNP Silicon COLLECTOR 1 BC556,B BC557,A,B,C BC558B 2 BASE 3 EMITTER MAXIMUM RATINGS Rating Symbol BC556 BC557 BC558 Unit Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C VCEO –65 –45 –30 Vdc VCBO –80 –50 –30 Vdc VEBO –5.0 Vdc IC –100 mAdc PD 625 mW 5.0 mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 Watt 12 mW/°C Operating and Storage Junction Temperature Range TJ, Tstg – 55 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 °C/W Thermal Resistance, Junction to Case RqJC 83.3 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (IC = –2.0 mAdc, IB = 0) BC556 BC557 BC558 V(BR)CEO –65 –45 –30 Collector – Base Breakdown Voltage (IC = –100 µAdc) BC556 BC557 BC558 V(BR)CBO –80 –50 –30 Emitter – Base Breakdown Voltage (IE = –100 mAdc, IC = 0) BC556 BC557 BC558 V(BR)EBO –5.0 –5.0 –5.0 Collector–Emitter Leakage Current (VCES = –40 V) (VCES = –20 V) (VCES = –20 V, TA = 125°C) BC556 BC557 BC558 BC556 BC557 BC558 ICES — — — — — — 1 2 3 CASE 29–04, STYLE 17 TO–92 (TO–226AA) Typ Max Unit —— —— —— —— —— —— —— —— —— –2.0 –100 –2.0 –100 –2.0 –100 — –4.0 — –4.0 — –4.0 V V V nA µA Motorola Small–Signal Transistors, FETs and Diodes Device Data 2–123 1 page 1.0 0.7 0.5 D = 0.5 0.2 0.3 0.2 0.1 0.1 0.07 0.05 0.03 0.02 0.05 0.01 0.1 0.2 0.5 BC556,B BC557,A,B,C BC558B SINGLE PULSE SINGLE PULSE P(pk) t1 t2 DUTY CYCLE, D = t1/t2 1.0 2.0 5.0 10 20 50 100 200 t, TIME (ms) Figure 13. Thermal Response ZθJC(t) = (t) RθJC RθJC = 83.3°C/W MAX ZθJA(t) = r(t) RθJA RθJA = 200°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) – TC = P(pk) RθJC(t) 500 1.0 k 2.0 k 5.0 k 10 k –200 1 s 3 ms –100 –50 TA = 25°C TJ = 25°C BC558 –10 BC557 BC556 –5.0 –2.0 –1.0 BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT –5.0 –10 –30 –45 –65 –100 VCE, COLLECTOR–EMITTER VOLTAGE (V) Figure 14. Active Region — Safe Operating Area The safe operating area curves indicate IC–VCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 14 is based upon TJ(pk) = 150°C; TC or TA is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided TJ(pk) ≤ 150°C. TJ(pk) may be calculated from the data in Figure 13. At high case or ambient temperatures, thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second breakdown. Motorola Small–Signal Transistors, FETs and Diodes Device Data 2–127 5 Page

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