DataSheetWiki


BC447 fiches techniques PDF

Motorola Semiconductors - HIGH VOLTAGE TRANSISTORS

Numéro de référence BC447
Description HIGH VOLTAGE TRANSISTORS
Fabricant Motorola Semiconductors 
Logo Motorola Semiconductors 





1 Page

No Preview Available !





BC447 fiche technique
BC445
BC447
BC449
CASE 29-02, STYLE 17
TO-92 (TO-226AA)
HIGH VOLTAGE TRANSISTORS
NPN SILICON
Refer to MPS8098 for graphs.
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Total Device Dissipation @Ta = 25°C
Derate above 25°C
@Total Device Dissipation Tc = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Symbol
VCEO
VCBO
VEBO
ic
PD
pd
Tj. T stg
BC BC BC
445 447 449
60 80 100
60 80 100
5.0
300
625
5.0
1.5
12
-55 to +150
Symbol
R»JC
Rwc
Max
83.3
200
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Watt
mW/°C
°C
Unit
°C/W
°c/w
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage*
(IC = 1.0 mAdc, Ib = 0)
BC445
BC447
BC449
V(BR)CEO
Collector-Base Breakdown Voltage
dC = 100 uA, Ie = 0)
BC445
BC447
BC449
V(BR)CBO
Emitter-Base Breakdown Voltage
(IE = 10 nAdc, Ic = 0)
V(BR)EBO
Collector Cutoff Current
VcB = 30 Vdc - Ie =
VcB = 40 Vdc - Ie =
VcB = 60 Vdc - Ie =
ON CHARACTERISTICS*
BC445
BC447
BC449
ICBO
DC Current Gain - Ic = 2 mA, Vce = 5 V
IC = 10 mA, Vce = 5 V
BC445/447 only
BC445/447 only
IC = 100 mA, Vce = 5 V
BC445/447 only
full range
A
B
full range
A
B
full range
A
B
hFE
Collector-Emitter Saturation Voltage
(IC = 100 mAdc, Ib = 10 mAdc)
Base-Emitter Saturation Voltage
(IC = 100 mAdc, Ib = 10 mAdc)
Base-Emitter On Voltage
dC = 100 mAdc, Vce = 5.0 Vdc)
DYNAMIC CHARACTERISTICS
VCE(sat)
VBE(sat)
VBE(on)
Current-Gain-Bandwidth Product
(IC = 50 mAdc, Vce = 5.0 Vdc, f = 100 MHz)
Output Capacitance
(VcB = 1 Vdc, Ie = 0, f = 1 .0 MHz)
fT
Cob
Input Capacitance
(VBE = 0.5 Vdc, Ic = 0, f = 1 .0 MHz)
' Pulse test - Pulse width < 300 us - Duty Cycle 2%
Cib
Min.
60
80
100
60
80
100
5
-
50
120
180
50
100
160
50
60
90
100
Typ.
-
0.1
0.85
0.8
250
3.0
16
Max.
-
Unit
Vdc
Vdc
-
_ Vdc
nAdc
100
100
100
460
220
460
0.25
_
1.2
_
Vdc
Vdc
Vdc
MHz
pF
PF
2-92

PagesPages 1
Télécharger [ BC447 ]


Fiche technique recommandé

No Description détaillée Fabricant
BC440 COMPLEMENTARY SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES Micro Electronics
Micro Electronics
BC441 COMPLEMENTARY SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES Micro Electronics
Micro Electronics
BC445 SILICON EPITAXIAL TRANSISTOR Micro Electronics
Micro Electronics
BC445 HIGH VOLTAGE TRANSISTORS Motorola Semiconductors
Motorola Semiconductors

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche