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Numéro de référence | BAW156LT1 | ||
Description | Monolithic Dual Switching Diode | ||
Fabricant | Motorola Semiconductors | ||
Logo | |||
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Monolithic Dual Switching Diode
This switching diode has the following features:
• Low Leakage Current Applications
• Medium Speed Switching Times
• Available in 8 mm Tape and Reel
Use BAW156LT1 to order the 7 inch/3,000 unit reel
Use BAW156LT3 to order the 13 inch/10,000 unit reel
ANODE
3
CATHODE
1
2
CATHODE
BAW156LT1
Motorola Preferred Device
3
1
2
CASE 318 – 08, STYLE 12
SOT– 23 (TO – 236AB)
MAXIMUM RATINGS
Rating
Symbol
Reverse Voltage
Forward Current
Peak Forward Surge Current
THERMAL CHARACTERISTICS
VR
IF
IFM(surge)
Characteristic
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
Symbol
PD
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate(2) TA = 25°C
Derate above 25°C
RqJA
PD
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
RqJA
TJ, Tstg
BAW156LT1 = JZ
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE)
Characteristic
Symbol
OFF CHARACTERISTICS
Reverse Breakdown Voltage (I(BR) = 100 µAdc)
Reverse Voltage Leakage Current (VR = 70 Vdc)
Reverse Voltage Leakage Current (VR = 70 Vdc, TJ = 150°C)
Diode Capacitance (VR = 0 V, f = 1.0 MHz)
Forward Voltage (IF = 1.0 mAdc)
Forward Voltage (IF = 10 mAdc)
Forward Voltage (IF = 50 mAdc)
Forward Voltage (IF = 150 mAdc)
Reverse Recovery Time (IF = IR = 10 mAdc) (Figure 1)
1. FR– 5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
Preferred devices are Motorola recommended choices for future use and best overall value.
V(BR)
IR
CD
VF
trr
Value
70
200
500
Max
225
1.8
556
300
2.4
417
– 55 to +150
Min
70
—
—
—
—
—
—
—
—
Unit
Vdc
mAdc
mAdc
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Max
—
5.0
80
2.0
900
1000
1100
1250
3.0
Unit
Vdc
nAdc
pF
mVdc
µs
REV 1
5–58
Motorola Small–Signal Transistors, FETs and Diodes Device Data
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Pages | Pages 2 | ||
Télécharger | [ BAW156LT1 ] |
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