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Numéro de référence | J308 | ||
Description | JFET VHF/UHF Amplifiers | ||
Fabricant | ON Semiconductor | ||
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1 Page
J308
JFET VHF/UHF Amplifiers
N−Channel — Depletion
MAXIMUM RATINGS
Rating
Drain −Source Voltage
Gate−Source Voltage
Forward Gate Current
Total Device Dissipation
@ TA = 25°C
Derate above 25°C
Junction Temperature Range
Storage Temperature Range
Symbol
VDS
VGS
IGF
PD
TJ
Tstg
Value
25
25
10
350
2.8
−65 to +125
−65 to +150
Unit
Vdc
Vdc
mAdc
mW
mW/°C
°C
°C
http://onsemi.com
1
23
CASE 29−11, STYLE 5
TO−92 (TO−226AA)
1 DRAIN
3
GATE
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Gate −Source Breakdown Voltage
(IG = −1.0 μAdc, VDS = 0)
Gate Reverse Current
(VGS = −15 Vdc, VDS = 0, TA = 25°C)
(VGS = −15 Vdc, VDS = 0, TA = +125°C)
Gate Source Cutoff Voltage
(VDS = 10 Vdc, ID = 1.0 nAdc)
J308
J309
J310
ON CHARACTERISTICS
Zero −Gate −Voltage Drain Current(1)
(VDS = 10 Vdc, VGS = 0)
J308
J309
J310
Gate−Source Forward Voltage
(VDS = 0, IG = 1.0 mAdc)
Symbol
V(BR)GSS
IGSS
VGS(off)
IDSS
VGS(f)
Min
− 25
—
—
− 1.0
− 1.0
− 2.0
12
12
24
—
2 SOURCE
Typ Max
Unit
— — Vdc
— −1.0 nAdc
— −1.0 μAdc
Vdc
— −6.5
— −4.0
— −6.5
mAdc
— 60
— 30
— 60
— 1.0 Vdc
© Semiconductor Components Industries, LLC, 2006
August, 2006 − Rev. 2
1
Publication Order Number:
J308/D
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Pages | Pages 6 | ||
Télécharger | [ J308 ] |
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