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Numéro de référence | 2N5640 | ||
Description | JFET SWITCHING | ||
Fabricant | Motorola Semiconductors | ||
Logo | |||
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
JFETs Switching
N–Channel — Depletion
Order this document
by 2N5640/D
2N5640
1 DRAIN
3
GATE
2 SOURCE
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDS 30 Vdc
Drain–Gate Voltage
Reverse Gate–Source Voltage
VDG
VGSR
30
30
Vdc
Vdc
Forward Gate Current
Total Device Dissipation @ TA = 25°C
Derate above 25°C
IGF
PD
10 mAdc
350 mW
2.8 mW/°C
Thermal Resistance, Junction to Ambient
Junction Temperature Range
Storage Temperature Range
RqJA
TJ
Tstg
357
– 65 to +150
– 65 to +150
°C/W
°C
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Gate–Source Breakdown Voltage (IG = 10 µAdc, VDS = 0)
Gate Reverse Current
(VGS = –15 Vdc, VDS = 0)
(VGS = –15 Vdc, VDS = 0, TA = 100°C)
Drain Cutoff Current
(VDS = 15 Vdc, VGS = –6.0 Vdc)
(VDS = 15 Vdc, VGS = –6.0 Vdc, TA = 100°C)
ON CHARACTERISTICS
Zero–Gate–Voltage Drain Current(1)
(VDS = 20 Vdc, VGS = 0)
Drain–Source On–Voltage
(ID = 3.0 mAdc, VGS = 0)
Static Drain–Source On Resistance
(ID = 1.0 mAdc, VGS = 0)
v v1. Pulse Test: Pulse Width 300 ms, Duty Cycle 3.0%.
1
2
3
CASE 29–04, STYLE 5
TO–92 (TO–226AA)
Symbol
Min
V(BR)GSS
IGSS
ID(off)
30
—
—
—
—
IDSS
VDS(on)
rDS(on)
5.0
—
—
Max Unit
— Vdc
1.0 nAdc
1.0 µAdc
1.0 nAdc
1.0 µAdc
— mAdc
0.5 Vdc
100 Ohms
REV 1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
© Motorola, Inc. 1997
1
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Pages | Pages 6 | ||
Télécharger | [ 2N5640 ] |
No | Description détaillée | Fabricant |
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