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Numéro de référence | VN2406L | ||
Description | Small Signal MOSFET | ||
Fabricant | ON Semiconductor | ||
Logo | |||
1 Page
VN2406L
Preferred Device
Small Signal MOSFET
200 mAmps, 240 Volts
N−Channel TO−92
MAXIMUM RATINGS
Rating
Drain −Source Voltage
Drain −Gate Voltage
Gate −Source Voltage
− Continuous
− Non−repetitive (tp ≤ 50 μs)
Continuous Drain Current
Pulsed Drain Current
Power Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes, 1/16″ from case for 10
seconds
Symbol
VDSS
VDGR
VGS
VGSM
ID
IDM
PD
TJ, Tstg
Symbol
RθJA
TL
Value
240
240
± 20
± 40
200
500
350
2.8
−
Max
312.5
300
Unit
Vdc
Vdc
Vdc
Vpk
mAdc
mAdc
mW
mW/°C
°C
Unit
°C/W
°C
http://onsemi.com
200 mAMPS
240 VOLTS
RDS(on) = 6 Ω
N−Channel
D
G
S
TO−92
CASE 29
Style 22
123
MARKING DIAGRAM
& PIN ASSIGNMENT
VN2406L
YWW
© Semiconductor Components Industries, LLC, 2006
August, 2006 − Rev. 4
1
Source
3
Drain
2
Gate
Y = Year
WW = Work Week
ORDERING INFORMATION
Device
Package
Shipping
VN2406L
VN2406LZL1
TO−92
TO−92
1000 Units/Box
2000 Ammo Pack
Preferred devices are recommended choices for future use
and best overall value.
1 Publication Order Number:
VN2406L/D
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Pages | Pages 3 | ||
Télécharger | [ VN2406L ] |
No | Description détaillée | Fabricant |
VN2406 | N-Channel Enhancement-Mode Vertical DMOS FETs | Supertex Inc |
VN2406D | N-Channel 240-V (D-S) MOSFETs | Vishay Siliconix |
VN2406L | Small Signal MOSFET | ON Semiconductor |
VN2406L | TMOS FET Transistor | Motorola Inc |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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