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Motorola Semiconductors - TMOS FET Transistor

Numéro de référence VN0610LL
Description TMOS FET Transistor
Fabricant Motorola Semiconductors 
Logo Motorola Semiconductors 





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VN0610LL fiche technique
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
TMOS FET Transistor
N–Channel — Enhancement
3DRAIN VN0610LL
2
GATE
MAXIMUM RATINGS
®
1 SOURCE
Rating
Symbol
Value
Unit
Drain – Source Voltage
Drain – Gate Voltage (RGS = 1 M)
Gate – Source Voltage
– Continuous
– Non–repetitive (tp 50 µs)
Drain Current
Continuous
Pulsed
Total Power Dissipation @ TA = 25°C
Derate above 25°C
VDSS
VDGR
VGS
VGSM
ID
IDM
PD
60
60
± 20
± 40
190
1000
400
3.2
Vdc
Vdc
Vdc
Vpk
mAdc
mW
mW/°C
Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
TJ, Tstg – 55 to +150
°C
Characteristics
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes, 1/16” from case for 10 seconds
RθJA
TL
312.5
300
°C/W
°C
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Drain – Source Breakdown Voltage
(VGS = 0, ID = 100 µA)
V(BR)DSS
Zero Gate Voltage Drain Current
(VDS = 48 Vdc, VGS = 0)
(VDS = 48 Vdc, VGS = 0, TJ = 125°C)
Gate–Body Leakage Current, Forward
(VGSF = 30 V, VDS = 0)
ON CHARACTERISTICS(1)
IDSS
IGSSF
Gate Threshold Voltage (VDS = VGS, ID = 1.0 mA)
Static Drain–Source On–Resistance
(VGS = 10 V, ID = 500 mA)
(VGS = 10 V, ID = 500 mA, TC = 125°C)
Drain–Source On–Voltage
(VGS = 5.0 V, ID = 200 mA)
(VGS = 10 V, ID = 500 mA)
On–State Drain Current (VGS = 10 V, VDS 2.0 VDS(on))
Forward Transconductance (VDS 2.0 VDS(on), ID = 500 mA)
v v1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
VGS(th)
rDS(on)
VDS(on)
ID(on)
gfs
1
2
3
CASE 29–04, STYLE 22
TO–92 (TO–226AA)
Min Max Unit
60 — Vdc
µAdc
— 10
— 500
–100
nAdc
0.8 2.5 Vdc
— 5.0
— 9.0
Vdc
— 1.5
— 2.5
750 — mAdc
100 — µmhos
REV 1
4–98
Motorola Small–Signal Transistors, FETs and Diodes Device Data

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