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Numéro de référence | P2N2907A | ||
Description | PNP SILICON PLANAR EPITAXIAL TRANSISTORS | ||
Fabricant | CDIL | ||
Logo | |||
1 Page
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP SILICON PLANAR EPITAXIAL TRANSISTORS
P2N2907
P2N2907A
TO-92
Plastic Package
CB E
Designed for switching and linear applications, DC amplifier and driver for industrial applications
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC Unless Specified Otherwise)
DESCRIPTION
SYMBOL
P2N2907
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
VCEO
VCBO
VEBO
40
60
5
Collector Current
Total Power Dissipation @ Ta=25ºC
Derate above 25ºC
ICM
PD
600
625
5
Total Power Dissipation @ TC=25ºC
Derate above 25ºC
PD
1.5
12
Operating and Storage Junction
Temperature Range
Tj, Tstg
- 55 to +150
P2N2907A
60
60
UNIT
V
V
V
mA
mW
mW/ºC
W
mW/ºC
ºC
THERMAL RESISTANCE
Junction to Case
Junction to Ambient
Rth (j-c)
Rth (j-a)
83.3 ºC/W
200 ºC/W
ELECTRICAL CHARACTERISTICS (Ta=25ºC Unless Specified Otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Cut off Current
*VCEO
VCBO
VEBO
ICBO
ICEX
ICEO
IC=10mA, IB=0
IC=10µA, IE=0
IE=10µA, IC=0
VCB=50V, IE=0
VCB=50V, IE=0, Ta=150oC
VCE=30V, VEB(off)=0.5V
VCE=10V, IB=0
Emitter Cut off Current
IEBO
VEB=3V, IC=0
Base Cut off Current
IBEX VCE=30V, VEB(off)=0.5V
Collector Emitter Saturation Voltage *VCE (sat)
IC=150mA, IB=15mA
IC=500mA, IB=50mA
Base Emitter Saturation Voltage
*VBE (sat)
IC=150mA, IB=15mA
IC=500mA, IB=50mA
P2N2907
>40
>60
>5
<20
<20
<50
<10
<10
<50
<0.4
<1.6
<1.3
<2.6
P2N2907A
>60
>60
>5
<10
<10
<50
<10
<10
<50
<0.4
<1.6
<1.3
<2.6
UNIT
V
V
V
nA
µA
nA
nA
nA
nA
V
V
P2N2907_A Rev_1151204D
Continental Device India Limited
Data Sheet
Page 1 of 5
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Pages | Pages 5 | ||
Télécharger | [ P2N2907A ] |
No | Description détaillée | Fabricant |
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