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P2N2907A fiches techniques PDF

ON Semiconductor - Amplifier Transistor

Numéro de référence P2N2907A
Description Amplifier Transistor
Fabricant ON Semiconductor 
Logo ON Semiconductor 





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P2N2907A fiche technique
P2N2907A
Amplifier Transistor
PNP Silicon
Features
These are Pb--Free Devices*
MAXIMUM RATINGS
Rating
Collector--Emitter Voltage
Collector--Base Voltage
Emitter--Base Voltage
Collector Current -- Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Symbol
VCEO
VCBO
VEBO
IC
PD
Value
--60
--60
--5.0
--600
625
5.0
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Total Device Dissipation @ TC = 25°C
PD
1.5
W
Derate above 25°C
12 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
--55 to
+150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient RθJA 200 °C/W
Thermal Resistance, Junction to Case
RθJC
83.3
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
COLLECTOR
1
2
BASE
3
EMITTER
TO--92
CASE 29
STYLE 17
123
STRAIGHT LEAD
BULK PACK
12 3
BENT LEAD
TAPE & REEL
AMMO PACK
MARKING DIAGRAM
P2N2
907A
AYWW G
G
*For additional information on our Pb--Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2007
April, 2007 -- Rev. 6
1
A = Assembly Location
Y = Year
WW = Work Week
G = Pb--Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping
P2N2907AG
TO--92
5000 Units / Bulk
(Pb--Free)
P2N2907ARL1G TO--92 2000 / Tape & Reel
(Pb--Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
P2N2907A/D

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