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PDF BDC01D Data sheet ( Hoja de datos )

Número de pieza BDC01D
Descripción One Watt Amplifier Transistor
Fabricantes ON Semiconductor 
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No Preview Available ! BDC01D Hoja de datos, Descripción, Manual

BDC01D
One Watt Amplifier
Transistor
NPN Silicon
Features
Pb−Free Package is Available*
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
100 Vdc
100 Vdc
5.0 Vdc
0.5 Adc
1.0 W
8.0 mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
2.5 W
20 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg −55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient RqJA
125 °C/W
Thermal Resistance, Junction−to−Case
RqJC
50 °C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
http://onsemi.com
COLLECTOR
2
3
BASE
1
EMITTER
TO−92 (TO−226)
CASE 29−10
1 STYLE 1
23
MARKING DIAGRAM
BDC
01D
AYWW G
G
BDC01D = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 2
1
ORDERING INFORMATION
Device
BDC01DRL1
BDC01DRL1G
Package
TO−92
TO−92
(Pb−Free)
Shipping
2000 / Tape & Reel
5000 / Tape & Reel
Publication Order Number:
BDC01D/D

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