PDF 2N4265 Data sheet ( Hoja de datos )

Número de pieza	2N4265
Descripción	GENERAL PURPOSE TRANSISTOR
Fabricantes	Motorola Semiconductors
Logotipo
Hay una vista previa y un enlace de descarga de 2N4265 (archivo pdf) en la parte inferior de esta página. Total 5 Páginas
No Preview Available ! 2N4264 2N4265 CASE 29-02, STYLE 1 TO-92 (TO-226AA) GENERAL PURPOSE TRANSISTOR NPN SILICON THERMAL CHARACTERISTICS Characteristic Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous @Total Device Dissipation TA = 25°C Derate above 25°C Total Device Dissipation (a Tq = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO vCBO v EBO "C PD Pd TJ. Tstg 2N4264 2N4265 15 12 30 6.0 200 625 5.0 1.5 12 -55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/°C Watts mW/°C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Symbol R &JC R &JA Max 83.3 200 Unit °C/W °c/w ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) OFF CHARACTERISTICS Characteristic Collector-Emitter Breakdown Voltage dC = 1.0 mAdc, lg = 0) 2N4264 2N4265 Collector-Base Breakdown Voltage dC = 10 MAdc, Ie = 0) Emitter-Base Breakdown Voltage (IE = 10 MAdc, lc = 0) Base Cutoff Current (V C E = 12Vdc,VEB(off) = 0.25 Vdc) (VCE = 12 Vdc, V EB(off) = 0.25 Vdc, TA = 100°C) Collector Cutoff Current (VCE = 12 Vdc, V EB (off) = 0.25 Vdc) ON CHARACTERISTICS DC Current Gain dC = 1.0 mAdc, VC e = 1.0 Vdc) 2N4264 2N4265 UC = 10 mAdc, Vqe = 1.0 Vdc) 2N4264 2N4265 dC = 10 mAdc, VC e = 1.0 Vdc, TA = -55°C) 2N4264 2N4265 dC = 30 mAdc, Vqe = 1.0 Vdc) 2N4264 2N4265 dC = 100 mAdc, Vce = 10 Vdc)(1) 2N4264 2N4265 dC = 200 mAdc, Vce = 1° Vdc)(1) Collector-Emitter Saturation Voltage dC = 10 mAdc, Bl = 1.0 mAdc) dC = 100 mAdc, Bl = 10 mAdcMD Base-Emitter Saturation Voltage dC = 10 mAdc, Bl = 1.0 mAdc) dC = 100 mAdc, Bl = 10 mAdcKD 2N4264 2N4265 Symbol v (BR)CEO v (BR)CBO v (BR)EBO 'BEV ! CEX 15 12 20 6.0 - — hFE v CE(sat) v BE(sat) 25 30 40 100 20 45 40 90 30 55 20 35 - 0.65 0.75 Max - - - 0.1 10 100 - 160 400 - - - — 0.22 0.35 0.80 0.95 Vdc Vdc Vdc /xAdc nAdc - Vdc Vdc 2-20 1 page —1 2N4264, 2N4265 DYNAMIC CHARACTERISTICS 100 70 IM Z 30 —FIGURE 8 DELAY TIME 1 II - 10V h-= 25°C @VeBM,,=3V V- 10 2.0 V* 5.0 11 10 20 50 cl , COLLECTOR CURRENT (mA) 100 200 —FIGURE 9 RISE TIME r~ Nil '<^ 100 v"* 70 ? 50 5 20 'i vv Vcc = 10 '"S. v\ V ^L !v <5, v^:c == 3 «8I ' 5 ^> 5,5 = Tj = 25°C T, = 125°C ^ i 10 2.0 5.0 10 20 50 cl , COLLECTOR CURRENT (mA) 100 200 —FIGURE 10 STORAGE TIME V ^30 $\-^; :::: »- I I Mill Tj = 25°C Tj = 125°C ri =lc /i B 1j :.-- .^ I , 50 2.0 5.0 10 20 50 lc. COLLECTOR CURRENT (mA) 100 200 200 100 70 s 50 d 30 - 20 10 7.0 5.0 10 —FIGURE 11 FALL TIME 1 II Mil = 25°C 125°C B = 20 -lc/l. 10 5> P ~>:' -. — 2.0 5.0 10 20 1 50 100 200 cl , COLLECTOR CURRENT (mA) —FIGURE 12 JUNCTION CAPACITANCE uj 5.0 — Cibo J I II MAX —— - T>V "^«. . ^ Cb -\ - 5,. 0.5 1.0 2.0 REVERSE BIAS (Vdc) _J —FIGURE 13 MAX MlJM CHARGE DATA 1000 Ml M\| \| - Ic/U = 10 _ Tj = 25°C Tj = 125-C 1 -J- fj // '/ /'' .,.' £200 ,- 4 —100 Vcc - i v 70 ','< Or £' iX-«^ 50 ¥ .= If V 1 11 _ VCC = 3V 'II \T20 1.0 2.0 3.0 5.0 7.0 10 Qa 20 30 50 70 100 200 lc, COLLECTOR CURRENT (mA) 2-24 5 Page

Páginas	Total 5 Páginas
PDF Descargar	[ Datasheet 2N4265.PDF ]

Hoja de datos destacado

Número de pieza	Descripción	Fabricantes
2N4260	Chip Type 2C4261 Geometry 0014 Polarity PNP	Semicoa Semiconductor
2N4260	PNP Transistor	Texas
2N4260	SWITCHING TRANSISTOR	Motorola Semiconductors
2N4260	PNP Transistor	New Jersey Semiconductor

Número de pieza	Descripción	Fabricantes
SLA6805M	High Voltage 3 phase Motor Driver IC.	Sanken
SDC1742	12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.	Analog Devices

DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.

DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar