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PDF 2N4926 Data sheet ( Hoja de datos )
| Número de pieza | 2N4926 | |
| Descripción | AMPLIFIER TRANSISTOR | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
Total Device Dissipation (a TA = 25°C
Derate above 25°C
@Total Device Dissipation Tc = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
v CEO
VCBO
VEBO
•c
PD
2N4926 2N4927
200 250
200 250
7.0
50
1.0
5.71
Pd
TJ' Tstg
5.0
28.6
-65 to +200
Unit
Vdc
Vdc
Vdc
mAdc
Watt
mW/°C
Watts
mW/°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Symbol
R ftJC
R 0JA
Max
35
175
Unit
°C/W
°C/W
2N4926
2N4927
CASE 79, STYLE 1
TO-39 (TO-205AD)
AMPLIFIER TRANSISTOR
NPN SILICON
ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (1)
dC = 10 mAdc, Ib = 0)
2N4926
2N4927
Collector-Base Breakdown Voltage
c(l = 0.1 mAdc, lc = 0)
2N4926
2N4927
Emitter-Base Breakdown Voltage
(Ig = 0.1 mAdc, lc = 0)
Collector Cutoff Current
(Vcb = 100 Vdc, El = 0)
(VC B = 100 Vdc, El = 0, T A = 100°C)
(VC b = 150 Vdc, El = 0)
(Vcb = 1 50 Vdc, El = 0, TA = 100°C)
2N4926
2N4927
Emitter Cutoff Current
(V BE = 5.0 Vdc)
ON CHARACTERISTICS (1)
DC Current Gain
(lc = 3.0 mAdc, Vc E = 10 Vdc)
(IC = 10 mAdc, Vce = 10 Vdc)
dC = 30 mAdc, Vc E = 10 Vdc)
dC = 50 mAdc, Vce = 20 vdc'
Collector-Emitter Saturation Voltage (lc
dC
10 mAdc, lg
30 mAdc, Ib
1.0 mAdc)
3.0 mAdc)
Base-Emitter Saturation Voltage dc = 10 mAdc, Ib = 10 mAdc)
dC = 50 mAdc, Ib = 3.0 mAdc)
Base-Emitter On Voltage
dp = 30 mAdc, Vce = 1
vdc
>
SMALL-SIGNAL CHARACTERISTICS
—Current-Gain Bandwidth Product c(l = 10 mAdc, Vce = 20 Vdc, f = 20 MHz)
Collector-Base Capacitance (Vcb = 20 Vdc, Ie 0, f = 140 kHz)
Input Impedance
(lc = 1
mAdc, Vce
=
10 vdc f
-
=
1 -° kHz)
Voltage Feedback Ratio
(lc
=
10 mAdc, Vce
=
1° vdc f
'
=
10
kHz
>
Small-Signal Current Gain
0c
=
10 mAdc, Vce
=
10 vdc f
-
=
10 kHz)
Output Admittance
dc
=
10 mAdc, Vce
=
10 vdc f
-
=
1 ° kHz >
Real Part of Input Impedance
dc
=
10 mAdc, Vce
=
20
vdc
'
f
=
5.0 MHz)
(1) Pulse Test: Pulse Width =s 300 /xs. Duty Cycle « 2.0%.
Symbol
v (BR)CEO
V(BR)CBO
V(BR)EBO
'CBO
lEBO
hFE
VcE(sat)
v BE(sat)
v BE(on)
^cb
hfe
Re(hj,
Min
200
250
200
250
10
15
20
20
30
0.1
Max
0.1
10
0.1
10
0.1
Unit
Vdc
Vdc
Vdc
jiAdc
,uAdc
200
1.0
2.0
1.2
1.5
1.5
300
6.0
2000
2.0
250
50
200
Vdc
MHz
PF
ohm
X 10 4
jiimhos
ohms
4-177
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet 2N4926.PDF ] | |
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