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2N4924 fiches techniques PDF

Motorola Semiconductors - AMPLIFIER TRANSISTOR

Numéro de référence 2N4924
Description AMPLIFIER TRANSISTOR
Fabricant Motorola Semiconductors 
Logo Motorola Semiconductors 





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2N4924 fiche technique
2N4924
2N4925
CASE 79-02, STYLE 1
TO-39 (TO-205AD)
AMPLIFIER TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current Continuous
@Total Device Dissipation T>\ = 25°C
Derate above 25°C
@Total Device Dissipation Jq = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
vCEO
vCBO
VEBO
ic
PD
Pd
TJ- Tst g
2N4924 2N4925
100 150
100 150
5.0
200
1.0
5.71
5.0
28.6
- 65 to + 200
Unit
Vdc
Vdc
Vdc
mAdc
Watt
mW/°C
Watts
mW/°C
°C
Refer to 2N3498 for graphs.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Symbol
R £UC
R 0JA
Max
35
175
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
OFF CHARACTERISTICS
Characteristic
Collector-Emitter Breakdown Voltage (1)
dC = 10 mAdc, Ib = 0)
2N4924
2N4925
Collector-Base Breakdown Voltage
dC = 10 /nAdc, El = 0)
2N4924
2N4925
Emitter-Base Breakdown Voltage
(IE = 10 MAdc, Ic = 0)
Collector Cutoff Current
(Vcb = 50 Vdc, El = 0)
(Vcb = 75 Vdc, = 0)
Emitter Cutoff Current
(V BE = 3.0 Vdc)
ON CHARACTERISTICS
DC Current Gain
dC = 1.0 mAdc, VC e = 10 Vdc)
dC = 10 mAdc, Vce = 10 Vdc)
dC = 150 mAdc, Vce = 10 Vdc)
Collector-Emitter Saturation Voltage
dC = 10 mAdc, Ib = 1.0 mAdc)
flC = 50 mAdc, Ib = 5.0 mAdc)
Base-Emitter On Voltage
dC = 50 mAdc, VCE = 10 Vdc)
SMALL-SIGNAL CHARACTERISTICS
Current-Gain Bandwidth Product (2)
dC = 20 mAdc, Vce = 20 Vdc, f = 100 MHz)
Collector-Base Capacitance
(Vcb = 20 Vdc, El = 0, f = 140 kHz)
Emitter-Base Capacitance
(V EB = 1.0 Vdc, cl = 0, f = 140 kHz)
(1) Pulse Test: Pulse Width
T =(2) f
|h fe | ft est.
300 ,us, Duty Cycle s 2.0%.
Symbol
Min
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
! EBO
100
150
100
150
5.0
-
Vdc
-
Vdc
-
Vdc
^Adc
0.1
0.1
0.1 /xAdc
hFE
v CE(sat)
VBE(on)
25
35
40
-
200
0.25
0.4
0.95
Vdc
Vdc
fT 100 500 MHz
Ccb 10 pF
Ceb
80 pF
4-176

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