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Numéro de référence | 2N4890 | ||
Description | GENERAL PURPOSE TRANSISTOR | ||
Fabricant | Motorola Semiconductors | ||
Logo | |||
1 Page
2N4453
For Specifications, See 2N869A Data.
2N4890
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
Total Device Dissipation (« T"a = 25°C
Derate above 25°C
Total Device Dissipation (a Tq = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCBO
VEBO
'C
PD
pd
TJ. Tstg
Value
40
60
5.0
1.0
1.0
5.7
5.0
28.6
- 65 to + 200
Unit
Vdc
Vdc
Vdc
Adc
Watt
mW/°C
Watts
mW/°C
°c
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown VoltageO) Oc = 100 ^Adc, Ib = 0)
Collector-Emitter Breakdown Voltage (Irj = 10 mAdc, Rbe = 10 ohms)
Collector-Base Breakdown Voltage Oc = 100 /xAdc, Ie = 0)
Emitter-Base Breakdown Voltage (If = 100 /xAdc, lc = 0)
Collector Cutoff Current (Vce = 60 Vdc, VBE(off) = 1-5 Vdc)
Base Cutoff Current (Vce = 60 Vdc, VBE(off) = 1-5 Vdc)
ON CHARACTERISTICS
DC Current Gain
c(l = 150 mAdc, Vce = 2.5 Vdc)
OC = 150 mAdc, Vce = 10 Vdc)
*(I C = 500 mA, VC E = 5 Vdc(1)
Collector-Emitter Saturation Voltage
c(l = 150 mAdc, Ib = 15 mAdc)
Base-Emitter Saturation Voltage
c(l = 150 mAdc, Ib = 15 mAdc)
Base-Emitter On Voltage
c(l = 150 mAdc, Vce = 2 - 5 vdc >
SMALL-SIGNAL CHARACTERISTICS
—Current-Gain Bandwidth Product
OC = 50 mAdc, VcE = 1° Vdc, f = 20 MHz)
Output Capacitance
(V C B = 10 Vdc, El = 0, f = 140 kHz)
Input Capacitance
(Vbe = 0.5 Vdc, cl = 0, f = 140 kHz)
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
(V C c
=
30 Vdc, V B E(off)
=
°- 8 vdc
'
lc = 150 mAdc, Ibi = 15 mAdc)
(Vce
=
30
Vdc
'
'C
=
mI 50 Adc,
IBI = lB2 = 15 mAdc)
(1) Pulse Test: Pulse Width = 300 /xs, Duty Cycle =s 2.0%.
Indicates Data in Addition to JEDEC Requirements.
Symbol
V(BR)CEO
V(BR)CER
V(BR)CBO
V(BR)EBO
!CEX
"BL
hFE
VCE(sat)
VBE(sat)
v BE(on)
h
C-obo
Cibo
td
tr
ts
tf
CASE 79-02, STYLE 1
TO-39 (TO-205AD)
GENERAL PURPOSE
TRANSISTOR
PNP SILICON
Refer to 2N4033 for graphs.
Typ Unit
—40 -
Vdc
--50
Vdc
-60 -
Vdc
- -5.0 Vdc
- - 0.25
^iAdc
- - 0.25
/xAdc
25 130
50 140 250
15
— 0.12 1.4 Vdc
— 0.82 1.7 Vdc
— 0.74 1.7 Vdc
100 280
— 9.0
— 60
— MHz
15 pF
80 pF
— 15 50 ns
20 20 50 ns
— 110 200
ns
- 20 70 ns
4-175
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Pages | Pages 1 | ||
Télécharger | [ 2N4890 ] |
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