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PDF 2N4406 Data sheet ( Hoja de datos )
| Número de pieza | 2N4406 | |
| Descripción | GENERAL PURPOSE TRANSISTORS | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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2N4406
2N4407
CASE 79, STYLE 1
TO-39 (TO-205AD)
GENERAL PURPOSE
TRANSISTORS
PNP SILICON
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—"Collector Current Continuous*
@Total Device Dissipation Ta = 25°C
Derate above 25°C
@Total Device Dissipation Jq = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Symbol
VCEO
VCBO
VEBO
ic
PD
pd
Tj, T st g
Symbol
Rojc
R«JA
Value
80
80
5.0
2.0
1.25
7.15
8.75
50
-65 to +200
Max
20
140
Unit
Vdc
Vdc
Vdc
Amps
Watts
mW/°C
Watts
mW/°C
°C
Unit
°C/W
°c/w
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.
OFF CHARACTERISTICS
Characteristic
Symbol
Min
Max
Collector-Emitter Breakdown Voltage(l)
Collector-Base Breakdown Voltage
Emitter-Bas e Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS
tic 10 mAdc, Ib = 0)
0C 10 (lAdc, Ie = 0)
(IE = 10 fiAdc, Ic = 0)
(Vcb = 60 Vdc, Ie = 0)
(VBE = 3.0 Vdc, Ic = 0)
v (BR)CE0
v (BR)CBO
V(BR)EB0
ICBO
lEBO
80
5.0
25
25
DC Current Gain(1)
(IC = 10 mAdc, Vce = 5.0 Vdc)
(IC = 1 50 mAdc, Vce = 5.0 Vdc)
dC = 500 mAdc, VCE = 5.0 Vdc)
dC = 1.0 Adc, Vce = 5.0 Vdc)
dC = 1-5 Adc, Vce = 5.0 Vdc)
2N4406
2N4407
2N4406
2N4407
2N4406
2N4407
2N4406
2N4407
2N4406, 2N4407
hFE
30
80
30
80
30 120
80 240
20
30
Collector-Emitter Saturation Voltage
(IC = 1 50 mAdc, Ib = 1 5 mAdc)
(IC = 500 mAdc, Ib = 50 mAdc)
dC = 1.0 Adc, Ib = 100 mAdc)
dC = 1-5 Adc, Ib = 1 50 mAdc)
VcE(sat)
0.2
0.4
0.7
1.5
Base-Emitter Saturation Voltage
(IC = 1 50 mAdc, Ib = 1 5 mAdc)
(IC = 1-0 Adc, Ib = 100 mAdc)
(IC = 1.5 Adc, Ib = 1 50 mAdc)
VBE(sat)
0.9
1.3
1.5
Base-Emitter On Voltage
dc = 500 mAdc, Vqe = 1-0 Vdc)
SMALL-SIGNAL CHARACTERISTICS
—Current-Gain Bandwidth Product
(IC = 50 mAdc, Vce = 20 Vdc, f = 100 MHz)
VBE(on)
fT
150
1.0
750
Collector-Base Capacitance
(Vcb = io vdc, ie = o, f = 1 .0 MHz)
Ccb
15
Emitter-Base Capacitance
(VBE = 0.5 Vdc, Ic = 0, f
1.0 MHz)
SWITCHING CHARACTERISTICS
Ceb
160
Delay Time
Rise Time
Storage Time
Fall Time
(Vce = 30 Vdc, VBE(off) = 2.0 Vdc,
IC - 1.0 Adc, IB1 = 1 00 mAdc)
(Vce = 30 Vdc, Ic = 1.0 Adc,
IB 1 - lB2 - 100 mAdc)
—td 15
—tr 60
—ts 175
—tf 50
(1) Pulse Test: Pulse Width s= 300 us, Duty Cycle =£ 2.0% •Indicates Data in addition to JEDEC Requirements.
4-172
Unit
Vdc
uAdc
uAdc
Vdc
Vdc
PF
pF
ns
ns
ns
ns
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2N4406.PDF ] | |
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