|
|
Numéro de référence | 2N4405 | ||
Description | GENERAL PURPOSE TRANSISTOR | ||
Fabricant | Motorola Semiconductors | ||
Logo | |||
1 Page
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
Total Device Dissipation (a T"a = 25°C
Derate above 25°C
Total Device Dissipation (a Jq = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCBO
VEBO
ic
pd
pd
TJ. T stg
Value
80
80
5.0
1.0
1.25
7.15
8.75
50
- 65 to + 200
Unit
Vdc
Vdc
Vdc
Adc
Watts
mW/°C
Watts
mW/°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Symbol
R&jc
R0JA
Max
Unit
°C/W
°c/w
2N4404
2N4405
CASE 79, STYLE 1
TO-39 (TO-205AD)
GENERAL PURPOSE TRANSISTOR
PNP SILICON
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(l) (\q = 10 mAdc, Ib = 0)
Collector-Base Breakdown Voltage (Ip = 10 j^Adc, Ie = 0)
Emitter-Base Breakdown Voltage 0e = 10 /*Adc, lp
Collector Cutoff Current (Vcb 60 Vdc, Ie = 0)
Emitter Cutoff Current (Vbe = 3.0 Vdc, Ic = 0)
0)
ON CHARACTERISTICS
DC Current Gain
c(l = 0.1 mAdc, Vce = 5.0 Vdc)
2N4404
2 N 4405
c(l = 10 mAdc, Vce = 5.0 Vdc)
2N4404
2N4405
(IC = 150 mAdc, Vce = 5.0 VdcXD
2N4404
2N4405
c(l = 500 mAdc, Vce = 5.0 Vdc)(1)
Collector-Emitter Saturation Voltage
(IC = 10 mAdc, Ib = 10 mAdc)
(IC = 150 mAdc, Ib = 15 mAdc)(1)
dC = 500 mAdc, Ib = 50 mAdc)(1)
Base-Emitter Saturation Voltage
(Ic = 10 mAdc, Ib = 1-0 mAdc)
(I'C = 500 mAdc, Bl = 50 mAdc)(1)
Base-Emitter On Voltage
C(l = 150 mAdc, V C e = 1.0 Vdc)
SMALL-SIGNAL CHARACTERISTICS
—Current-Gain Bandwidth Product
C(l = 50 mAdc, VC e = 20 Vdc, f = 100 MHz)
Collector-Base Capacitance
(Vcb = 10 vdc Ie = o, f = 1.0 mhz)
Emitter-Base Capacitance
(v B e = °-5 vdc ic = o. f
1.0 MHz)
2N4404
2N4405
Symbol
Min
V(BR)CEO
V(BR)CBO
V(BR)EBO
'CBO
lEBO
hFE
Max
25
Vdc
Vdc
40
100
40 120
100 300
VcE(sat)
VBE(sat)
VBE(on)
0.85
0.1.5
0.2
0.5
0.8
1.2
Vdc
Vdc
Ccb
Ceb
PF
PF
4-167
|
|||
Pages | Pages 5 | ||
Télécharger | [ 2N4405 ] |
No | Description détaillée | Fabricant |
2N4400 | General Purpose Transistors(NPN Silicon) | ON Semiconductor |
2N4400 | NPN EXPITAXIAL SILICON TRANSISTOR | Semtech Corporation |
2N4400 | NPN General Purpose Amplifier | Fairchild Semiconductor |
2N4400 | NPN SILICON PLANAR EPITAXIAL TRANSISTOR | Micro Electronics |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |