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Motorola Semiconductors - GENERAL PURPOSE TRANSISTOR

Numéro de référence 2N3497
Description GENERAL PURPOSE TRANSISTOR
Fabricant Motorola Semiconductors 
Logo Motorola Semiconductors 





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2N3497 fiche technique
2N3494
2N3495
CASE 31-03, STYLE 1
TO-39 (TO-205AD)
2N3496
2N3497
CASE 22-03, STYLE 1
TO-18 (TO-206AA)
GENERAL PURPOSE
TRANSISTOR
PNP SILICON
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current Continuous
Symbol
vCEO
VCBO
v EBO
"C
@Total Device Dissipation T"a = 25°C
Derate above 25°C
@Total Device Dissipation Tc = 25°C*
Derate above 25°C
PD
pd
Operating and Storage Junction
Temperature Range
Tj, Tst g
•Indicates Data in addition to JEDEC Requirements.
2N3494 2N3495
2N3496 2N3497
80 120
80 120
4.5
100
2N3494 2N3496
2N3495 2N3497
600
3.43
400
2.28
3.0
17.2
1.2
6.85
- 65 to + 200
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Watts
mW/°C
°C
ELECTRICAL CHARACTERISTICS <TA = 25°C unless otherwise noted.!
OFF CHARACTERISTICS
Characteristic
Collector-Emitter Breakdown VoltageO)
dC = 10 mAdc, Ib = 0)
Collector-Base Breakdown Voltage
dC = 10 |uAdc, Ie = 0)
2N3494, 2N3496
2N3495, 2N3497
2N3494, 2N3496 '
2N3495, 2N3497
Emitter-Base Breakdown Voltage
(IE = 10 |uAdc, lc = 0)
Collector Cutoff Current
(Vcb = 50 Vdc, El = 0)
(Vcb = 90 Vdc, El = 0)
Emitter Cutoff Current '
(V B e = 3.0 Vdc, lc = 0)
ON CHARACTERISTICS
2N3494, 2N3496
2N3495, 2N3497
DC Current Gain(1)
dC = 100 juAdc, Vce = 10 Vdc)
dC = 1.0 mAdc, VC E = 10 Vdc)
dC = 10 mAdc, Vce = Vdc)
dC = 50mAdCi,VCE - 10 Vdc)
dp = 100 mAdc, Vce = 10 Vdc)
2N3494, 2N3496
Collector-Emitter Saturation Voltage
(It = .10 mAdc, Ib = 1.0 mAdc)
2N3494, 2N3496
2N3495, 2N3497
Base-Emitter Saturation Voltage
flC = 10 mAdc, Ib = 1.0 mAdc)
SMALL-SIGNAL CHARACTERISTICS
Current-Gain Bandwidth Product(2)
dC = 20 mAdc, Vce = Vdc, f = 100 MHz)
2N3494, 2N3496
2N3495, 2N3497
Output Capacitance
(Vcb = 10 Vdc, El = 0, f = 100 kHz)
2N3494, 2N3496
2N3495, 2N3497
Input Capacitance
(Vbe = 2.0 Vdc, lc = 0, f = 100 kHz)
Symbol
V(BR)CEO
v (BR)CBO
v (BR)EBO
ICBO
!eBO
hFE
v CE(sat)
v BE(sat)
fT
C bo
Cibo
Min
80
120
80
120
4.5
-
35
40
40
40
35
0.6
200
150
-
Max
-
-
-
100
100
25
Unit
Vdc
Vdc
Vdc
nAdc
nAdc
0.3
0.35
0.9
-
7.0
6.0
30
Vdc
MHz
pF
pF
4-90

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