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PDF 2N3495 Data sheet ( Hoja de datos )
| Número de pieza | 2N3495 | |
| Descripción | PNP TRANSISTORS | |
| Fabricantes | Central Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2N3495 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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2N3494
2N3495
SILICON
PNP TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N3494 and 2N3495
are silicon PNP transistors designed for general purpose
amplifier and switching applications.
MARKING: FULL PART NUMBER
TO-39 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Power Dissipation (TC=25°C)
Operating and Storage Junction Temperature
SYMBOL
VCBO
VCEO
VEBO
IC
PD
PD
TJ, Tstg
2N3494
80
2N3495
120
80 120
4.5
100
0.6
3.0
-65 to +200
UNITS
V
V
V
mA
W
W
°C
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
2N3494
SYMBOL TEST CONDITIONS
MIN MAX
ICBO
VCB=50V (2N3494)
- 100
ICBO
VCB=90V (2N3495)
--
IEBO
VEB=3.0V
- 25
BVCBO
IC=10μA
80 -
BVCEO
IC=10mA
80 -
BVEBO
IE=10μA
4.5 -
VCE(SAT) IC=10mA, IB=1.0mA
- 0.3
VBE(SAT) IC=10mA, IB=1.0mA
0.6 0.9
hFE VCE=10V, IC=100μA
35 -
hFE VCE=10V, IC=1.0mA
40 -
hFE VCE=10V, IC=10mA
40 -
hFE VCE=10V, IC=50mA
40 -
hFE VCE=10V, IC=100mA
35 -
fT
VCE=10V, IC=20mA, f=100MHz
200 -
Cob VCB=10V, IE=0, f=100kHz
- 7.0
Cib VEB=2.0V, IC=0, f=100kHz
- 30
hie
VCE=10V, IC=10mA, f=1.0kHz
0.1 1.2
hre VCE=10V, IC=10mA, f=1.0kHz - 2.0
hfe
VCE=10V, IC=10mA, f=1.0kHz
40 300
hoe VCE=10V, IC=10mA, f=1.0kHz - 300
Re(hie)
VCE=10V, IC=20mA, f=300MHz
- 30
ton
VCC=30V, IC=10mA, IB1=1.0mA
- 300
toff
VCC=30V, IC=10mA, IB1=IB2=1.0mA -
1.0
2N3495
MIN MAX
--
- 100
- 25
120 -
120 -
4.5 -
- 0.35
0.6 0.9
35 -
40 -
40 -
40 -
--
150 -
- 6.0
- 30
0.1 1.2
- 2.0
40 300
- 300
- 30
- 300
- 1.0
UNITS
nA
nA
nA
V
V
V
V
V
MHz
pF
pF
kΩ
x10-4
μS
Ω
ns
ms
R0 (11-March 2015)
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2N3495.PDF ] | |
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