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Motorola Semiconductors - AMPLIFIER TRANSISTORS

Numéro de référence BC321
Description AMPLIFIER TRANSISTORS
Fabricant Motorola Semiconductors 
Logo Motorola Semiconductors 





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BC321 fiche technique
BC320, A, B
BC321, A, B
BC322, B
CASE 29-02, STYLE 1
TO-92 (TO-226AA)
AMPLIFIER TRANSISTORS
PNP SILICON
Refer to BC559 for graphs.
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
@TaTotal Device Dissipation
= 25°C
Derate above 25°C
Total Device Dissipation @Jq = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Symbol
VCEO
VCBO
VEBO
ic
PD
pd
Tj, T s tg
BC BC BC
320 321 322
45 30 20
50 40 30
6.0 5.0 5.0
150
625
5.0
1.5
12
-55 to +150
Symbol
Rgjc
Rsjc
Max
83.3
200
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Watt
mW/°C
°C
Unit
°C/W
°c/w
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Type
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 1 mA, Ib =
BC320
BC321
BC322
V(BR)CE0
Collector-Emitter Breakdown Voltage
IC = 100uA, VBE =
BC320
BC321
BC322
V(BR)CES
Collector-Base Breakdown Voltage
IC = 100 uA, Ie =
BC320
BC321
BC322
V(BR)CBO
Emitter-Base Breakdown Voltage
IE = 100 uA, Ic =
BC320
BC321
BC322
V(BR)EBO
Collector Cutoff Current
VcB = 20 V, Ie =
ON CHARACTERISTICS
ICBO
Base-Emitter on Voltage
IC = 2 mA, VcE = 5 V
IC = 10 mA, VcE = 5 V
VBE(on)
Collector-Emitter Saturation Voltage
IC = 100 mA, Ib = 5 mA
VCE(sat)
Base-Emitter Saturation Voltage
IC = 10 mA, Ib = 0.5 mA
IC = 100 mA, Ib = 5 mA
DC Current Gain
IC = 1 uA, VcE = 5 V
IC = 2 mA, VcE = 5V
BC320A
BC321A
BC320B
BC321B
BC322B
BC320A
BC321A
BC320B
BC321B
BC322B
VBE(sat)
hFE
Min. | Typ. | Max. | Unit
45 Vdc
30
20
50 Vdc
40
30
50 Vdc
40
30
6 Vdc
5
5
nAdc
30
0.57
40
40
40
1 10
1 10
200
200
200
0.68
0.35
0.77
0.99
50
50
100
100
100
180
180
290
290
290
0.72
0.77
0.50
Vdc
Vdc
Vdc
220
220
450
450
450
2-78

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