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PDF BC308 Data sheet ( Hoja de datos )
| Número de pieza | BC308 | |
| Descripción | AMPLIFIER TRANSISTORS | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
@Total Device Dissipation Ta = 25°C
Derate above 25°C
Total Device Dissipation @Tc = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal flesistance. Junction to Ambient
Symbol
VCEO
VCBO
VEBO
ic
PD
pd
Tj. T s tg
BC BC BC
307 308 309
45 25 25
50 30 30
5.0
100
350
2.8
1.0
8.0
-55 to +150
Symbol
Rejc
Rwc
Max
125
357
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Watt
mW/°C
°C
Unit
°C/W
°c/w
.
BC307
BC308
BC309
CASE 29-02, STYLE 17
TO-92 (TO-226AA)
AMPLIFIER TRANSISTORS
PNP SILICON
ELECTRICAL CHARACTERISTICS (Ta = 25 °C unless otherwise noted)
Characteristic
Type
Symbol
Min.
Typ.
Max.
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(IC = 2.0 mAdc, Ib = 0)
BC307
BC308
BC309
— -V(BR)CE0
45
25
25
Emitter-Base Breakdown Voltage
(IE = 100uAdc, Ic = 0)
BC307
BC308
BC309
V(BR)EBO
5
5
5
—-
Collector-Emitter Leakage Current
(VCES = 50 V, V B E = 0)
(V C ES = 30 V, V B E = 0)
(VCES = 50 V, V B E = 0)TA = 125°C
(V C ES = 30 V, V B E = 0) T A = 1 25 °C
ON CHARACTERISTICS
BC307
BC308
BC309
BC307
BC308
BC309
ices
0.2 15
0.2 15
0.2 15
0.2 4.0
0.2 4.0
0.2 4.0
DC Current Gain
dC = 1 uAdc, VCE = 5 Vdc)
BC307A/308A/309A
BC307B/308B/309B
BC307C/308C/309C
hFE
90
150
270
(IC = 2 mAdc, Vce = 5 Vdc)
BC307
BC308
BC309
BC307A/308A/309A
BC307B/308B/309B
BC307C/308C/309C
120 800
120 800
120 800
120 170 220
180 290 460
380 500 800
(IC = 100 mAdc, Vce = 5 Vdc)
BC307A/308A/309A
BC307B/308B/309B
BC307C/308C/309C
120
180
300
Collector-Emitter Saturation Voltage
(IC = 10 mAdc, Ib = 0,5 mAdc)
(IC = 1 mAdc, Ib = see Note 1)
(IC = 100 mAdc, Ib = 5 mAdc)
VCE(sat)
—
0.10
0.30
0.30
0.60
0.25
Base-E:mitter Saturation Voltage
(IC = 10 mAdc, Ib = 0.5 mAdc)
(IC = 100 mAdc, Ib = 5 mAdc)
VBE(sat)
-
0.70
1.00
-
Base-Emitter on Voltage
dC = 2 mAdc, VCE = 5 Vdc)
VBE(on)
0.55
0.62
0.70
Note 1 : Ic = 10 mAdc on the constant base current characteristic, which yields the point Ic = 11 mAdc, Vce = 1 V
Unit
Vdc
Vdc
Vdc
nA
Vdc
Vdc
Vdc
2-73
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet BC308.PDF ] | |
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