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Numéro de référence | BC238 | ||
Description | NPN SILICON PLANAR EPITAXIAL TRANSISTORS | ||
Fabricant | CDIL | ||
Logo | |||
1 Page
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR EPITAXIAL TRANSISTORS
CB E
BC237,238, A,B,C
BC239, B,C
TO-92
Plastic Package
For Lead Free Parts, Device
Part # will be Prefixed with
"T"
Amplifier Transistors
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC)
DESCRIPTION
SYMBOL
Collector Emitter Voltage
VCEO
Collector Emitter Voltage
Emitter Base Voltage
VCES
VEBO
Collector Current Continuous
IC
Power Dissipation at Ta=25ºC
PD
Derate Above 25ºC
Power Dissipation at Tc=25ºC
PD
Derate Above 25ºC
Operating And Storage Junction
Temperature Range
Tj, Tstg
BC237
45
50
6.0
BC238
25
30
5.0
100
350
2.8
1.0
8.0
- 55 to +150
THERMAL RESISTANCE
Junction to Ambient in free air
Junction to Case
Rth (j-a)
Rth (j-c)
357
125
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
Collector Emitter Voltage
VCEO
IC=2mA, IB=0
BC237
Emitter Base Voltage
VEBO
BC238/BC239
IE=10µA, IC=0
BC237
BC238/BC239
Collector Cut Off Current
ICES BC238/BC239
VCE=30V, VBE=0
BC237
VCE=50V, VBE=0
MIN
45
25
6.0
5.0
BC238/BC239
VCE=30V, VBE=0, Ta=125ºC
BC237
VCE=50V, VBE=0, Ta=125ºC
BC237_239Rev_1 201205E
BC239
25
30
5.0
MAX
15
15
4.0
4.0
UNITS
V
V
V
mA
mW
mW/ºC
W
mW/ºC
ºC
ºC/W
ºC/W
UNITS
V
V
V
V
nA
nA
µA
µA
Continental Device India Limited
Data Sheet
Page 1 of 5
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Pages | Pages 5 | ||
Télécharger | [ BC238 ] |
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