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PDF 2N4391 Data sheet ( Hoja de datos )
| Número de pieza | 2N4391 | |
| Descripción | N-Channel JFETs | |
| Fabricantes | Vishay | |
| Logotipo |  |
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2N/PN/SST4391 Series
Vishay Siliconix
N-Channel JFETs
2N4391
2N4392
2N4393
PRODUCT SUMMARY
Part Number
2N/PN/SST4391
2N/PN/SST4392
2N/PN/SST4393
VGS(off) (V)
–4 to –10
–2 to –5
–0.5 to –3
rDS(on) Max (W)
30
60
100
ID(off) Typ (pA)
5
5
5
tON Typ (ns)
4
4
4
PN4391
PN4392
PN4393
SST4391
SST4392
SST4393
FEATURES
D Low On-Resistance: 4391<30 W
D Fast Switching—tON: 4 ns
D High Off-Isolation: ID(off) with Low
Leakage
D Low Capacitance: < 3.5 pF
D Low Insertion Loss
BENEFITS
D Low Error Voltage
D High-Speed Analog Circuit Performance
D Negligible “Off-Error,” Excellent Accuracy
D Good Frequency Response, Low Glitches
D Eliminates Additional Buffering
APPLICATIONS
D Analog Switches
D Choppers
D Sample-and-Hold
D Normally “On” Switches
D Current Limiters
D Commutators
DESCRIPTION
The 2N/PN/SST4391 series features many of the superior
characteristics of JFETs which make it a good choice for
demanding analog switching applications and for specialized
amplifier circuits.
The 2N series hermetically-sealed TO-206AA (TO-18) can is
available with processing per MIL-S-19500 (see Military
Information). Both the PN, TO-226AA (TO-92), and SST,
TO-236 (SOT-23), series are available in tape-and-reel for
automated assembly (see Packaging Information). For similar
dual products, see the 2N5564/5565/5566 data sheet.
TO-206AA
(TO-18)
S
1
2
D
3
Top View
2N4391
2N4392
2N4393
G and Case
TO-226AA
(TO-92)
D1
S2
G3
Top View
PN4391
PN4392
PN4393
For applications information see AN104 and AN106
.
Document Number: 70241
S-04028—Rev. F, 04-Jan-01
TO-236
(SOT-23)
D1
S2
3G
Top View
SST4391 (CA)*
SST4392 (CB)*
SST4393 (CC)*
*Marking Code for TO-236
www.vishay.com
7-1
1 page  
2N/PN/SST4391 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Noise Voltage vs. Frequency
100
VDS = 10 V
10
ID = 1 mA
ID = 10 mA
Forward Transconductance and Output onductance
vs. Gate-Source Cutoff Voltage*
50 500
gfs and gos @ VDS = 20 V
VGS = 0 V, f = 1 kHz
40 400
30 gfs gos
200
20 200
10 100
1
10
100 1 k 10 k
f – Frequency (Hz)
100 k
10 nA
1 nA
Gate Leakage Current
IGSS @ 125_C
TA = 125_C
ID = 10 mA
100 pA
1 mA
1 mA
10 pA
1 pA
TA = 25_C
10 mA
IGSS @ 25_C
0.1 pA
0
IG(on) @ ID
6 12 18 24
VDG – Drain-Gate Voltage (V)
30
Common-Gate Forward Admittance
100
VDG = 10 V
ID = 10 mA
TA = 25_C
–gfg
bfg
10
gfg
1
00
0 –2 –4 –6 –8 –10
VGS(off) – Gate-Source Cutoff Voltage (V)
Common-Gate Input Admittance
100
VDG = 10 V
ID = 10 mA
TA = 25_C
gig
10
big
1
0.1
100
200 500
f – Frequency (MHz)
1000
Common-Gate Reverse Admittance
10
VDG = 10 V
ID = 10 mA
TA = 25_C
1.0 –brg
–grg
0.1
+grg
0.1
100
200 500
f – Frequency (MHz)
Document Number: 70241
S-04028—Rev. F, 04-Jan-01
1000
0.01
100
200 500
f – Frequency (MHz)
1000
www.vishay.com
7-5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet 2N4391.PDF ] | |
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