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Datasheet 3N158A-PDF.HTML Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
3N1 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 3N100E | MTB3N100E MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTB3N100E/D
Designer's
TMOS E-FET .™ High Energy Power FET D 2 PAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate
The D2PAK package has the capability of housing a larger die than any existing surface mount package whi  Motorola Semiconductors data | | |
| 2 | 3N121 | Trans MOSFET N-CH 20V 0.05A Rail New Jersey Semiconductor mosfet | | |
| 3 | 3N123 | Trans MOSFET N-CH 20V 0.05A Rail New Jersey Semiconductor mosfet | | |
| 4 | 3N128 | MOSFET AMPLIFIER MAXIMUM RATINGS
Rating Drain-Source Voltage
Drain-Gate Voltage Gate-Source Voltage
Drain Current
@Total Device Dissipation T/^ = 25°C
Derate above 25°C Operating and Storage Junction
Temperature Range
Symbol vDs vDg vgs
id
Pd
Tj, Tstg
Value + 20 + 20 ±10 50 330 2.2
-65 to +175
Unit
Vdc Vdc Vdc Motorola Semiconductors amplifier | | |
| 5 | 3N128 | Silicon MOS Transistor General Electric Solid State transistor | | |
| 6 | 3N128 | Trans MOSFET N-CH 20V 0.05A Rail New Jersey Semiconductor mosfet | | |
| 7 | 3N129 | Trans MOSFET N-CH 20V 0.05A Rail New Jersey Semiconductor mosfet | |
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