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Numéro de référence | 2N5462 | ||
Description | P-Channel JFETs | ||
Fabricant | Vishay | ||
Logo | |||
1 Page
P-Channel JFETs
2N/SST5460 Series
Vishay Siliconix
2N5460
2N5461
2N5462
SST5460
SST5461
SST5462
PRODUCT SUMMARY
Part Number
2N/SST5460
2N/SST5461
2N/SST5462
VGS(off) (V)
0.75 to 6
1 to 7.5
1.8 to 9
V(BR)GSS Min (V)
40
40
40
gfs Min (mS)
1
1.5
2
IDSS Min (mA)
–1
–2
–4
FEATURES
D High Input Impedance
D Very Low Noise
D High Gain: AV = 80 @ 20 mA
D Low Capacitance: 1.2 pF Typical
BENEFITS
D Low Signal Loss/System Error
D High System Sensitivity
D High-Quality Low-Level Signal
Amplification
APPLICATIONS
D Low-Current, Low-Voltage Amplifiers
D High-Side Switching
D Ultrahigh Input Impedance
Pre-Amplifiers
DESCRIPTION
The 2N/SST5460 series are p-channel JFETs designed to
provide all-around performance in a wide range of amplifier
and analog switch applications.
The 2N series, TO-226AA (TO-92), and SST series, TO-236
(SOT-23), plastic packages provide low cost options, and are
available in tape-and-reel for automated assembly, (see
Packaging Information).
TO-226AA
(TO-92)
S1
D2
G3
Top View
2N5460
2N5461
2N5462
TO-236
(SOT-23)
D1
S2
3G
SST5460 (B0)*
SST5461 (B1)*
SST5462 (B2)*
*Marking Code for TO-236
Top View
ABSOLUTE MAXIMUM RATINGS
Gate-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 V
Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –10 mA
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65 to 150_C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C
Lead Temperature (1/16” from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C
Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW
Notes
a. Derate 2.8 mW/_C above 25_C
Document Number: 70262
S-04030—Rev. D, 04-Jun-01
www.vishay.com
9-1
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Pages | Pages 5 | ||
Télécharger | [ 2N5462 ] |
No | Description détaillée | Fabricant |
2N546 | Trans GP BJT NPN 80V 7A 3-Pin(2+Tab) TO-66 Sleeve | New Jersey Semiconductor |
2N5460 | CASE 2904/ STYLE 7 TO92 (TO226AA) | Motorola Inc |
2N5460 | JFET Amplifiers | ON Semiconductor |
2N5460 | P-Channel General Purpose Amplifier | Fairchild Semiconductor |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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