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PDF 2N5943 Data sheet ( Hoja de datos )
| Número de pieza | 2N5943 | |
| Descripción | HIGH FREQUENCY TRANSISTOR | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2N5943 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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2N5943
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
@Total Device Dissipation TA = 25°C
Derate above 25°C
Total Device Dissipation (w Tq = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
v CEO
v CBO
v EBO
"C
PD
Pd
TJ' Tstg
Value
30
40
3.5
400
1.0
5.7
3.5
0.02
-65 to +200
Unit
Vdc
Vdc
Vdc
mAdc
Watt
mW/°C
Watts
mW/°C
°C
CASE 79-02, STYLE 1
TO-39 (TO-205AD)
HIGH FREQUENCY TRANSISTOR
NPN SILICON
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (Irj = 5.0 mAdc, lg = 0)
Co I lector- Base Breakdown Voltage (Irj = 100 /uAdc, lg = 0)
Emitter-Base Breakdown Voltage Oe = 100 /*Adc, lc = 0)
Collector Cutoff Current (Vqe = 20 Vdc, Ib = 0)
Collector Cutoff Current (Vcb = 15 Vdc, lg = 0)
ON CHARACTERISTICS
DC Current Gain (Iq = 50 mAdc, Vqe = 15 Vdc)
Collector-Emitter Saturation Voltage 0c = 100 mAdc, lg = 10 mAdc)
=Base-Emitter- Saturation Voltage (lc 100 mAdc, lg = 10 mAdc)
SMALL SIGNAL CHARACTERISTICS
—Current-Gain Bandwidth Product
dC = 25 mAdc, Vce = 15 Vdc, f = 200 MHz)
dC = 50 mAdc, Vce = 15 Vdc, f = 200 MHz)
dC = 100 mAdc, Vce = 15 Vdc, f = 200 MHz)
Collector-Base Capacitance
(Vcb = 30 Vdc, El = 0, f = 100 kHz)
Emitter-Base Capacitance
(V EB = 0.5 Vdc, cl = 0, f = 100 kHz)
Small Signal Current Gain
dC = 50 mAdc, Vce = 1 5 Vdc, f = 1.0 kHz)
Collector Base Time Constant
(IE = 50 mAdc, Vcb = 15 Vdc, f = 31.8 MHz)
Noise Figure
dC = 30 mAdc, Vce = 15 Vdc, f = 200 MHz) (Figure 1)
dC = 35 mAdc, Vce = 15 Vdc, f = 200 MHz) (Figure 6)
FUNCTIONAL TEST
Common-Emitter Amplifier Power Gain
dC = 10 mAdc, Vce = 15 Vdc, f = 200 MHz) (Figure 1)
dC = 50 mAdc, VCE = 15 Vdc, f = 250 MHz) (Figure 6)
Intermodulation Distortion
dC = 50 mAdc, VC£ = 15 Vdc, Vout = +50 dBmV)
Cross Modulation Distortion
dC = 50 mAdc, Vce = 1 5 Vdc, V out = +40 dBmV)
dC = 50 mAdc, VCE = 15 Vdc, Vout = +50 dBmV)
Symbol
V{BR)CEO
v (BR)CBO
v (BR)EBO
!CEO
'CBO
hFE
v CE(sat)
v BE(sat)
h
Ccb
Ceb
hfe
rb'C c
NF
Min
30
40
3.5
—
--
25
—
-
Typ
—
—
—
—
—
•
—
0.15
0.88
1000
1200
1000
1.0
—
25
2.0
-
1350
1550
1425
1.6
8.4
—
5.5
3.4
6.8
G pe
IM
11.4
7.0 7.6
——
XM
- -67
-45
Max
—
—
50
10
300
0.2
1.0
2400
2.5
15
350
20
8.0
-
-50
-42
Unit
Vdc
Vdc
Vdc
^Adc
fiAdc
—
Vdc
Vdc
MHz
pF
pF
-
ps
dB
dB
dB
dB
7-55
1 page  
2N5943
FIGURE 17 - FORWARD TRANSFER ADMITTANCE
versus FREQUENCY
S 400
E
B
Sz< 300
t
I1
Vrc= 15 Vdc
IC = 50rr Adc
<
cc
<
DC
o
cc
I°
cc
-bfe
.
£-100
200 300 500
f, FREQUENCY (MHz)
FIGURE 19 - OUTPUT ADMITTANCE versus FREQUENCY
50
_ 45
| 40
~ 35
? 30
Io *
* 20
5
I'
°
10
5.0
V CE = 15 Vdc ,
>0mAdc
h
9oe
100
200 300
500 700 1000
f, FREQUENCY (MHzl
FIGURE 21 - INPUT REFLECTION COEFFICIENT versus
FREQUENCY
30° 20° 10°
350" 340°
330°
FIGURE 18- FORWARD TRANSFER ADMITTANCE versus
COLLECTOR CURRENT
| 250
e
£
o 200
z
<
I_
I
f = 200 MHz
-bfe
I 150
<
rr
1 10°
cc 9fe
£
10 20 30 40 50 60 70 80 90 100
IC. COLLECTOR CURRENT (mAdc)
FIGURE 20 - OUTPUT ADMITTANCE versus COLLECTOR
CURRENT
20
I
I
18 V C(; = IS VHr
( = 200 MHz
16
14
12
10
b oe
8.0
6.0
4.0
2.0
II
J
9oe
1
'
10 20 30 40 50 60 70 80 90 100
IC. COLLECTOR CURRENT (mAdc)
FIGURE 22 - OUTPUT REFLECTION COEFFICIENT versus
FREQUENCY
30° 20" 10°
350° 340°
330°
150°
160°
170° 180° 190°
200°
210°
7-59
160°
170°
180° 190°
200°
210°
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 2N5943.PDF ] | |
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