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Numéro de référence | 2N5108 | ||
Description | HIGH FREQUENCY TRANSISTOR | ||
Fabricant | Motorola Semiconductors | ||
Logo | |||
1 Page
2N5108
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Emitter Voltage (Rbe = 10(7)
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
Total Device Dissipation (a Tq = 25°C
Derate above 25°C
Storage Temperature
Symbol
vCEO
VCER
v CBO
v EBO
•c
PD
Tstg
Value
30
55
55
3.0
0.4
3.5
0.02
- 65 to + 200
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Watts
mW/°C
°C
CASE 79-02, STYLE 1
TO-39 (TO-205AD)
HIGH FREQUENCY TRANSISTOR
NPN SILICON
w
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.;
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
dC = 5.0 mAdc, Rgg = 10 ohms)
Collector-Base Breakdown Voltage
dC = 0.1 mAdc, Ig = 0)
Emitter-Base Breakdown Voltage
(Ig = 0.1 mAdc, lc = 0)
Collector Cutoff Current
(Vce = 15 Vdc, Bl = 0)
Collector Cutoff Current
(Vqe = 50 Vdc, Vbe = 0)
(VC e = 15 Vdc, V BE = 0, Tc = 150°C)
ON CHARACTERISTICS
Collector-Emitter Saturation Voltage
dC = 100 mAdc, Bl = 10 mAdc)
SMALL SIGNAL CHARACTERISTICS
—Current-Gain Bandwidth Product
,
C(l
=
50 mAdc, Vce
=
15 vdc f
-
=
200
MHz
>
Output Capacitance
(Vcb = 30 Vdc, l E = 0, f = 1.0 MHz)
FUNCTIONAL TEST
Common-Emitter Amplifier Power Gain (Figure 1)
(Pout = LOW, VCc = 28 Vdc, lc = 102 mAdc, f = 1.0 GHz)
Power Output (Figure 1)
(Pj n = 316 mW, V CE = 28 Vdc, f = 1.0 Ghz)
Collector Efficiency (Figure 1)
(Pj n = 316 mW, VCE = 28 Vdc, f = 1.0 GHz)
Power Output (Oscillator) (Figure 2)
< VCE
=
20
Vdc
'
VEB
=
1- 5 Vdc f
'
=
168 GHz'
(Minimum Efficiency = 15%)
Symbol
V(BR)CER
V(BR)CBO
V(BR)EBO
ICEO
'CES
VCE(sat)
Min Typ Max
|
|
55 — -
55 — —
— —3.0
"
— — 20
- - 1.0
10
— — 0.5
h
C bo
1200
—
—
1.3
—
3.0
GPE
Pout
V
Pout
— —5.0
— —1.0
35 — —
"0.3
Unit
Vdc
Vdc
Vdc
fiAdc
/iAdc
mAdc
Vdc
MHz
pF
dB
Watt
%
Watt
7-31
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Pages | Pages 3 | ||
Télécharger | [ 2N5108 ] |
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