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PDF 2N5032 Data sheet ( Hoja de datos )
| Número de pieza | 2N5032 | |
| Descripción | HIGH FREQUENCY TRANSISTOR | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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2N5031
2N5032
CASE 20-03, STYLE 10
TO-72 (TO-206AF)
HIGH FREQUENCY TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
Total Device Dissipation AT(a< = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCBO
VEBO
•c
PD
TJ< Tstg
Value
10
15
3.0
20
200
1.14
- 65 to + 200
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
c(l = 1.0 mAdc, Ib = 0)
Collector-Base Breakdown Voltage
(IC = 0.01 mAdc, El = 0)
Emitter-Base Breakdown Voltage
E(l = 0.01 mAdc, lc = 0)
Collector Cutoff Current
(Vcb = 6.0 Vdc, Ie = 0)
ON CHARACTERISTICS
DC Current Gain
dC = 1.0 mAdc, Vqe = 6.0 Vdc)
SMALL SIGNAL CHARACTERISTICS
—Current-Gain Bandwidth Product
dC = 5.0 mAdc, VCE = 6.0 Vdc, f = 100 MHz)
Collector-Base Capacitance
(Vce = 6.0 Vdc, El = 0, f = 0.1 MHz)
Collector Base Time Constant
dC = 6.0 mAdc, Vce = 6.0 Vdc, f = 31.8 MHz)
Noise Figure (Figure 1)
dC = 1.0 mAdc, Vce = 6.0 Vdc, f = 450 MHz)
2N5031
2N5032
FUNCTIONAL TEST
Common-Emitter Amplifier Power Gain (Figure 1)
(Vce = 6.0 Vdc, lc = 1-0 mAdc, f = 450 MHz)
Symbol
Min
V(BR)CEO
V(BR)CBO
V(BR)EBO
'CBO
10
15
3.0
—
hFE 25
fT
Ccb
rb'C c
NF
1000
—
—
-
Typ
—
—
—
1.0
—
—
1.3
5.0
~
UMax
— Vdc
— Vdc
— Vdc
10 nAdc
—300
3500
1.5
—
2.5
3.0
25
MHz
pF
ps
dB
7-28
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2N5032.PDF ] | |
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