DataSheetWiki


2N4958 fiches techniques PDF

Motorola Semiconductors - HIGH FREQUENCY TRANSISTOR

Numéro de référence 2N4958
Description HIGH FREQUENCY TRANSISTOR
Fabricant Motorola Semiconductors 
Logo Motorola Semiconductors 





1 Page

No Preview Available !





2N4958 fiche technique
2N4957
2N4958
2N4959
2N5829
2N4957
JAN, JTX, JTXV AVAILABLE
CASE 20-03, STYLE 10
TO-72 (TO-206AF)
HIGH FREQUENCY TRANSISTOR
PNP SILICON
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current Continuous
Total Device Dissipation (a TA = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
vCEO
vCBO
v EBO
ic
PD
TJ' Tstg
Value
30
30
3.0
30
200
1.14
-65 to +200
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted]
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
dC = 1.0 mAdc, Ib = 0)
Collector-Base Breakdown Voltage
dC = 100 ^Adc, = 0)
Emitter-Base Breakdown Voltage
(IE = 100 ^Adc, cl = 0)
Collector Cutoff Current
(VCB = 10 Vdc, El = 0)
(Vcb = 10 Vdc, Ie = 0, TA = 150°C)
ON CHARACTERISTICS
DC Current Gain
dC = 2.0 mAdc, VC E = 10 Vdc)
SMALL SIGNAL CHARACTERISTICS
Current-Gain Bandwidth Product! 1)
(IE = 2.0 mAdc, V C E = 10 Vdc, f = 100 MHz)
2N4957, 2N5829
2N4958, 2N4959
Collector-Base Capacitance
(Vcb
=
io
Vdc
-
Ie
=
o, f
=
1.0 MHz)
Small Signal Current Gain
dC = 2.0 mAdc, V CE = 10 Vdc, f = 1.0 kHz)
Collector Base Time Constant
(IE = 2.0 mAdc, Vcb = 10 Vdc, f = 63.6 MHz)
Noise Figure (Figure 1)
dC = 2.0 mAdc, VC E = 10 Vdc, f = 450 MHz)
FUNCTIONAL TEST
2N5829
2N4957
2N4958
2N4959
Common-Emitter Amplifier Power Gain (Figure 1)
(Vce = 10 Vdc, lc = 2.0 mAdc, f = 450 MHz)
2N4957, 2N5829
2N4958
2N4959
(1) fj is defined as the frequency at which |hfe | extrapolates to unity.
Symbol
v(BR)CEO
v (BR)CBO
V(BR)EBO
ICBO
30
30
3.0
-
"FE 20
fT
Ccb
hfe
rb'C c
NF
1200
1000
20
1.0
-
G pe
17
16
15
Typ
-
40
1600
1500
0.4
2.3
2.6
2.9
3.2
Unit
- Vdc
Vdc
Vdc
0.1
100
jiAdc
150
2500
2500
0.8
200
8.0
2.5
3.0
3.3
3.8
25
25
25
MHz
pF
ps
dB
dB
7-20

PagesPages 8
Télécharger [ 2N4958 ]


Fiche technique recommandé

No Description détaillée Fabricant
2N4951 Trans GP BJT NPN 30V 1A 3-Pin TO-92 New Jersey Semiconductor
New Jersey Semiconductor
2N4952 Trans GP BJT NPN 30V 1A 3-Pin TO-92 Box New Jersey Semiconductor
New Jersey Semiconductor
2N4953 NPN General Purpose Amplifier Fairchild Semiconductor
Fairchild Semiconductor
2N4953 Trans GP BJT NPN 30V 1A 3-Pin TO-92 Box New Jersey Semiconductor
New Jersey Semiconductor

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche