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PDF 2N3960 Data sheet ( Hoja de datos )
| Número de pieza | 2N3960 | |
| Descripción | HIGH FREQUENCY TRANSISTOR | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2N3960 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Total Device Dissipation (§ TA = 25°C
Derate above 25°C
Total Device Dissipation <& Tq = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
vCEO
vCBO
vEBO
PD
Pd
TJ. Tstg
Value
12
20
4.5
400
2.3
750
4.3
-65 to +200
Unit
Vdc
Vdc
Vdc
mW
mW/°C
mW
mW/°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Symbol
Rtuc
R &JA
Max
0.233
0.436
Unit
°C/mW
°C/mW
2N3959
2N3960
JAN, JTX, JTXV AVAILABLE
CASE 22-03, STYLE 1
TO-18 (TO-206AA)
HIGH FREQUENCY TRANSISTOR
NPN SILICON
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted.)
Characteristic
Symbol Min Typ
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
OC = 10 mAdc, Bl = 0)
Collector-Base Breakdown Voltage
dC = 10 /jAdc, Ie = 0)
Emitter-Base Breakdown Voltage
(IE = 10 /xAdc, lc = 0)
- -v (BR)CEO
12
Vdc
— —v(BR)CBO
20
Vdc
— —v (BR)EBO
4.5
Vdc
Collector Cutoff Current
(Vce = 10 Vdc, V E b = 2.0 Vdc)
(Vce = 10 Vdc, V E b = 2.0 Vdc, TA = 150°C)
Collector Forward Current
(VCE = 5.0 Vdc, V BE = 0.4 Vdc)
Base Cutoff Current
(Vce = 10 Vdc, V EB = 2.0 Vdc)
ON CHARACTERISTICS
- -!CEX
0.005
/iAdc
5.0
— —!CEX
1.0 /iAdc
— —"BL
0.005
/xAdc
DC Current Gain
OC = 1.0 mAdc, Vce = 10 Vdc)
(IC = 10 mAdc, Vce = 1° vdc >
dC = 30 mAdc, Vce = 10 Vdc)
Collector-Emitter Saturation Voltage
flc = 10 mAdc, Bl = 0.1 mAdc)
0c = 30 mAdc, Bl = 3.0 mAdc)
Base-Emitter On Voltage
dC = 1.0 mAdc, VC e = 10. Vdc)
dC
=
30 mAdc, Vce
=
1
°
vdc
>
SMALL SIGNAL CHARACTERISTICS
—Current-Gain Bandwidth Product
dC = 5.0 mAdc, VC E = 4.0 Vdc, f = 100 MHz)
2IN3959
2N3960
hFE
v CE(sat)
v BE(on)
25
40
25
-
-
-
-
-
-fT
1000
1300
400
0.2
0.3
0.8
1.0
Vdc
Vdc
MHz
Z
C(l = 10 mAdc, VC E = 10 Vdc, f = 100 MHz)
2N3959
2N3960
1300
1600
-
—
dC = 30 mAdc, Vce = 4.0 Vdc, f = 100 MHz)
Output Capacitance
(Vcb = 4.0 Vdc, El = 0, f = 1.0 MHz)
2N3959
2N3960
1000
-
-
1200
C bo
— 2.0 2.5 PF
7-15
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2N3960.PDF ] | |
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