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Motorola Semiconductors - HIGH FREQUENCY TRANSISTOR

Numéro de référence 2N3553
Description HIGH FREQUENCY TRANSISTOR
Fabricant Motorola Semiconductors 
Logo Motorola Semiconductors 





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2N3553 fiche technique
2N3553
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current Continuous
@Total Device Dissipation Tc = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
vCEO
vCBO
v EBO
•c
p D.
TJ< Tstg
Value
40
65
4.0
1.0
7.0
40
-65 to +200
Unit
Vdc
Vdc
Vdc
Adc
Watts
mwrc
°c
JAN, JTX, JTXV AVAILABLE
CASE 79-02, STYLE 1
TO-39 (TO-205AD)
HIGH FREQUENCY TRANSISTOR
NPN SILICON
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.;
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage(1)
OC = 200 mAdc, Ib = 0)
Emitter-Base Breakdown Voltage
(IE = 0.1 mAdc, Iq = 0)
Collector Cutoff Current
(Vce = 30 Vdc, Bl = 0)
— —vCEO(sus)
40
Vdc
v(BR)EBO
4.0
Vdc
'CEO
0.1 mAdc
Collector Cutoff Current
(VCE = 30 Vdc, V BE(off) = 1.5 Vdc, TC = 200°C)
(VCE = 65 Vdc, V BE(off) = 1-5 Vdc)
Emitter Cutoff Current
(V B £ = 4.0 Vdc, lc = 0)
ON CHARACTERISTICS
DC Current Gain
OC = 250 mAdc, Vce = 5.0 Vdc)
Collector-Emitter Saturation Voltage
OC = 250 mAdc, Ib = 50 mAdc)
- -'CEX
mAdc
5.0
1.0
— —'EBO
0.1 mAdc
"FE 10 — —
— —vCE(sat)
1.0 Vdc
SMALL SIGNAL CHARACTERISTICS
Current-Gain Bandwidth Product
dC = 100 mAdc, VC E = 28 Vdc, f = 100 MHz)
Output Capacitance
(Vcb = 30 Vdc, El = 0, f = 100 kHz)
•t
C bo
500 MHz
8.0 10 PF
FUNCTIONAL TEST (FIGURE 2)
Amplifier Power Gain
(VCE = 28 Vdc, Pout = 2.5 Watts, f = 175 MHz)
Collector Efficiency
(VC£ = 28 Vdc, Pout = 2.5 Watts, f = 175 MHz)
Power Input
(VCE = 28 Vdc, P out = 2.5 Watts, f = 175 MHz)
mH(1) Pulsed thru a 25
inductor.
— —G pe
10
dB
V 50 %
Pin
0.25
Watt
7-7

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