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PDF BFY90 Data sheet ( Hoja de datos )
| Número de pieza | BFY90 | |
| Descripción | HIGH FREQUENCY TRANSISTOR | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BFY90 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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BFX89
BFY90
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
Total Continuous Device Dissipation
<& TA = 25°C
Derate above 25°C
Storage Temperature
Symbol
v CEO
v CBO
VEBO
"C
PD
TStq
Value
15
30
2.5
50
200
1.14
- 65 to + 200
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
°C
CASE 20-03, STYLE 10
TO-72 (TO-206AF)
HIGH FREQUENCY TRANSISTOR
NPN SILICON
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
c(l = 10 mAdc, Ib = 0)
Collector Cutoff Current
(Vcb = 15 Vdc, El = 0)
ON CHARACTERISTICS
DC Current Gain
dC = 2.0 mAdc, Vce = 10 Vdc)
c{\ = 25 mAdc, VC e = 1 Vdc)
SMALL SIGNAL CHARACTERISTICS
—Current-Gain Bandwidth Product! 1)
(IC = 2.0 mA, Vce = 5.0 Vdc, f = 500 MHz)
BFX89
BFY90
(IC = 25 mA, Vce = 5.0 Vdc, f = 500 MHz)
Emitter-Base Capacitance
(V EB = 0.5 Vdc, lc = 0, f = 1.0 MHz)
Collector-Base Capacitance(2)
(Vcb = 10 Vdc, El = 0, f = 1.0 MHz)
FUNCTIONAL TEST
Common-Emitter Amplifier Power GainO)
(Vce = 1 Vdc, lc = 8.0 mA, f = 200 MHz)
Spot Noise Figure (Rs = Optimum)(1)
(Vce = 5.0 Vdc, lc = 2.0 mA, f = 500 MHz)
(1) Pin 4 is grounded.
(2) Pin 4 is not grounded.
BFX89
BFY90
BFY90
BFX89
BFY90
BFX89
BFY90
BFX89
BFY90
Symbol
Min
V(BR)CEO
'CBO
15
—
hFE
fT
Cjbo
c cb
25
20
1.0
1.3
—
-
G pe
19
NF
-
Typ Max
— —'
— 10
Unit
Vdc
nAdc
- 150
125
GHz
1.0
1.1
— 2.0
0.85
0.85
21
2.5
2.5
1.7
1.5
-
6.5
5.0
pF
PF
dB
dB
7-101
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet BFY90.PDF ] | |
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