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PDF 2N6603 Data sheet ( Hoja de datos )

Número de pieza 2N6603
Descripción HIGH FREQUENCY TRANSISTOR
Fabricantes Motorola Semiconductors 
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2N6603
JAN, JTX, JTXV AVAILABLE
CASE 303-01, STYLE 1
HIGH FREQUENCY TRANSISTOR
NPN SILICON
MAXIMUM RATINGS (Ta = 25°C Free Air Temperature)
Rating
Symbol
Value
Collector-Emitter Voltage
vCEO
15
Collector-Base Voltage
VCBO
25
Emitter-Base Voltage
Collector Current Continuous
@Total Device Dissipation Tq = 125°C
Derate above 125°C
VEBO
'c
PD
3.0
30
400
5.33
Storage Temperature
Tstg
- 65 to + 200
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.;
Characteristic
Symbol
Typ
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
dC = 1.0 mAdc, Ib = 0)
Collector-Base Breakdown Voltage
dC = 0.1 mAdc, Ie = 0)
Emitter-Base Breakdown Voltage
(IE = 0.1 mAdc, lc = 0)
Collector Cutoff Current
(Vcb = 15 Vdc, Ie = 0)
v (BR)CEO
v (BR)CBO
v (BR)EBO
! CBO
15
25
3.0
-
Vdc
Vdc
Vdc
50 nAdc
ON CHARACTERISTICS
DC Current Gain
dC = 15 mAdc, Vce = 10 Vdc)
— —hFE 30
200
SMALL SIGNAL CHARACTERISTICS
Co I lector- Base Capacitance! 1)
(Vcb = 1 o vdc, Ie = o, 0.1 mhz «f«i.o MHz)
Ccb
0.25
0.75
pF
FUNCTIONAL TEST
Common-Emitter Amplifier Power Gain (Figure 1)
(VC e = 10 Vdc, lc = 15 mA, f = 1.0 GHz)
Spot Noise Figure (Rs = Optimum) (Figure 1)
(VCe = 10 Vdc, lc = 5.0 mA, f = 1.0 GHz)
Power Gain at Optimum Noise Figure (Figure 1)
(Vce = 10 Vdc, lc = 5.0 mA, f = 1.0 GHz)
G pe
NF
Gnf
15 21 dB
1.0 2.5 dB
10 dB
TYPICAL 2 GHz PERFORMANCE
Maximum Available Gain (Figure 1)(2)
mA(Vce
=
10
Vdc
'
'C
=
15
-f
=
20 GHz
>
Noise Figure (Rs = Optimum) (Figure 1)
(Vce = 10 Vdc, lc = 5.0 mA, f = 2.0 GHz)
MAG 11 dB
NF 2.9 dB
(1) CCD measurement employs a three-terminal capacitance bridge incorporating a guard circuit. The emitter terminal shall be connected to
the guard terminal of the bridge.
MAG MAG(2) is calculated from the S-Parameters using the equation
^ IS21I 2
=
d
15*7;
-|Sii|'i (1
r;
-|s
2
757
2r)
7-76

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