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PDF 2N6519 Data sheet ( Hoja de datos )
| Número de pieza | 2N6519 | |
| Descripción | High Voltage Transistors | |
| Fabricantes | Motorola Semiconductors | |
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Hay una vista previa y un enlace de descarga de 2N6519 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 2N6515/D
High Voltage Transistors
COLLECTOR
3
COLLECTOR
3
2
BASE
NPN
1
EMITTER
2
BASE
PNP
1
EMITTER
NPN
2N6515
2N6517
PNP
2N6519
2N6520
MAXIMUM RATINGS
Rating
2N6517
Symbol 2N6515 2N6519 2N6520
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
2N6515, 2N6516, 2N6517
2N6519, 2N6520
VCEO
250
300
350
VCBO
250
300
350
VEBO
6.0
5.0
Base Current
Collector Current — Continuous
Total Device Dissipation
@ TA = 25°C
Derate above 25°C
IB
IC
PD
250
500
625
5.0
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
PD
1.5
12
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Thermal Resistance, Junction to Ambient
RqJA
200
Thermal Resistance, Junction to Case
RqJC
83.3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IB = 0)
2N6515
2N6519
2N6517, 2N6520
Collector – Base Breakdown Voltage
(IC = 100 µAdc, IE = 0 )
2N6515
2N6519
2N6517, 2N6520
Emitter – Base Breakdown Voltage
(IE = 10 µAdc, IC = 0)
2N6515, 2N6517
2N6519, 2N6520
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
Unit
Vdc
Vdc
Vdc
mAdc
mAdc
mW
mW/°C
Watts
mW/°C
°C
Voltage and current are negative
for PNP transistors
1
23
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
Unit
°C/W
°C/W
Symbol
Min
Max
Unit
V(BR)CEO
Vdc
250 —
300 —
350 —
V(BR)CBO
Vdc
250 —
300 —
350 —
V(BR)EBO
Vdc
6.0 —
5.0 —
REV 1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
© Motorola, Inc. 1997
1
1 page  
1.0 k
700
500
300
200
100
70
50
30
20
10
1.0
NPN 2N6515 2N6517 PNP 2N6519 2N6520
NPN
PNP
2N6515, 2N6517
td @ VBE(off) = 2.0 V
tr
VCE(off) = 100 V
IC/IB = 5.0
TJ = 25°C
1.0 k
700
500
300
200
100
70
50
30
20
2N6519, 2N6520
td @ VBE(off) = 2.0 V
tr
VCE(off) = –100 V
IC/IB = 5.0
TJ = 25°C
2.0 3.0 5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
50 70 100
10
–1.0
Figure 7. Turn–On Time
– 2.0 – 3.0 – 5.0 – 7.0 –10 – 20 – 30
IC, COLLECTOR CURRENT (mA)
– 50 – 70 –100
10 k
7.0 k
5.0 k
3.0 k
2.0 k
1.0 k
700
500
300
200
100
1.0
2N6515, 2N6517
ts
VCE(off) = 100 V
tf IC/IB = 5.0
IB1 = IB2
TJ = 25°C
2N6519, 2N6520
2.0 k
ts
1.0 k
700
500 tf
300
200
100
VCE(off) = –100 V
IC/IB = 5.0
IB1 = IB2
TJ = 25°C
70
50
2.0 3.0 5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
50 70 100
30
20
–1.0
– 2.0 – 3.0 – 5.0 – 7.0 –10 – 20 – 30 – 50 – 70 –100
IC, COLLECTOR CURRENT (mA)
Figure 8. Turn–Off Time
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet 2N6519.PDF ] | |
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