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2N5086 fiches techniques PDF

Motorola Semiconductors - AMPLIFIER TRANSISTOR

Numéro de référence 2N5086
Description AMPLIFIER TRANSISTOR
Fabricant Motorola Semiconductors 
Logo Motorola Semiconductors 





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2N5086 fiche technique
2N5086
2N5087
CASE 29-02, STYLE 1
TO-92 (TO-226AA)
AMPLIFIER TRANSISTOR
PNP SILICON
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current Continuous
@Total Device Dissipation TA = 25°C
Derate above 25°C
@Total Device Dissipation Tq = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
vCEO
VCBO
VEBO
ic
PD
Pd
Tj. Tstg
Value
Unit
50 Vdc
50 Vdc
3.0 Vdc
50 mAdc
350 mW
2.8 r mW/°C
1.0 Watt
8.0 mW/°C
-55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
. Max
Unit
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Rojc
RfljAd)
125
357
''
°C/W
°c/w
(1) R^jA is measured with the device soldered into a typical printed circuit board.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(2)
(IC = 1.0 mAdc, Ib = 0)
Collector-Base Breakdown Voltage
dC = 100 ixAdc, Ie = 0)
Collector Cutoff Current
(Vcb = 10 Vdc, Ie = 0)
(Vcb = 35 Vdc, Ie = 0)
Emitter Cutoff Current
(Vbe = 3.0 Vdc, Cl = 0)
ON CHARACTERISTICS
DC Current Gain
dC = 100 /xAdc, Vce = 5.0 Vdc)
2N5086
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Symbol
v (BR)CEO
V(BR)CBO
!CBO
lEBO
Nlin
50
50
-
Max
10
50
50
Unft
Vdc
Vdc
nAdc
nAdc
hFE
150 500
250 800
c(l = 1.0 mAdc, Vce = 5.0 Vdc)
2N5086
2N5087
150
250
(lC = 10 mAdc, VC e = 5.0 Vdc)(2)
Collector-Emitter Saturation Voltage
dC = 10 mAdc, lg = 1.0 mAdc)
Base-Emitter On Voltage
(lC
=
1.0 mAdc, Vce
=
5.0
vdc
>
SMALL-SIGNAL CHARACTERISTICS
Current-Gain Bandwidth Product
(lC = 500 /*Adc, Vce = 5.0 Vdc, f = 20 MHz)
Collector-Base Capacitance
(Vcb = 5.0 Vdc, El = 0, f = 100 kHz)
Small-Signal Current Gain
(lC = 1.0 mAdc, Vce = 5.0 Vdc, f = 1.0 kHz)
Noise Figure
(lC = 20 ;uAdc, Vce = 5.0 Vdc, R$ = 10 k ohms,
f = 10 Hz to 15.7 kHz)
(lC = 100 /iAdc, Vce = 5.0 Vdc, Rs = 3.0 k ohms,
f = 1.0 kHz)
(2) Pulse Test: Pulse Width =s 300 fis, Duty Cycle =s 2.0%.
2N5086
2N5087
2N5086
2N5087
2N5086
2N5087
2N5086
2N5087
v CE(sat)
v BE(on)
150
250
•*—
n 40
Ccb
hfe
150
250
NF
0.3
0.85
4.0
600
900
3.0
2.0
3.0
2.0
Vdc
Vdc
MHz
pF
dB
2-36

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