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PDF 2N4402 Data sheet ( Hoja de datos )
| Número de pieza | 2N4402 | |
| Descripción | PNP Plastic Encapsulated Transistor | |
| Fabricantes | SeCoS | |
| Logotipo |  |
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Elektronische Bauelemente
2N4402
-0.6 A, -40 V
PNP Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
General Purpose Amplifier Transistor
TO-92
Collector
Base
Emitter
GH
J
AD
B
K
E CF
Emitter
Base
Collector
REF.
A
B
C
D
E
F
G
H
J
K
Millimeter
Min. Max.
4.40 4.70
4.30 4.70
12.70
-
3.30 3.81
0.36 0.56
0.36 0.51
1.27 TYP.
1.10
-
2.42 2.66
0.36 0.76
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Rating
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal resistance, junction to ambient
Junction, Storage Temperature
VCBO
VCEO
VEBO
IC
PC
RθJA
TJ, TSTG
-40
-40
-5
-0.6
625
200
150, -55~150
Unit
V
V
V
A
mW
°C / W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol Min Typ Max Unit
Test Condition
Collector to Base Breakdown Voltage
V(BR)CBO
-40
-
-
V IC= 0.1mA, IE = 0A
Collector to Emitter Breakdown Voltage
V(BR)CEO *
-40
-
-
V IC= -1mA, IB = 0A
Emitter to Base Breakdown Voltage
V(BR)EBO
-5
-
-
V IE= -0.1mA, IC = 0A
Collector Cut-Off Current
ICBO - - -0.1 μA VCB= -40V, IE = 0 A
Emitter Cut-Off Current
IEBO - - -0.1 μA VEB= -4V, IC =0 mA
30 -
-
VCE= -1V, IC= -1mA
DC Current Gain
hFE *
50 -
-
50 - 150
VCE= -1V, IC= -10mA
VCE= -2V, IC= -150mA
20 -
-
VCE= -2V, IC= -500mA
Collector to Emitter Saturation Voltage
VCE(sat) *
-
-
- -0.4 V IC= -150mA, IB= -15mA
- -0.75
IC= -500mA, IB= -50mA
Base to Emitter Saturation Voltage
VBE(sat) *
-0.75
-
-
-
-0.95
-1.3
V
IC= -150mA, IB=-15mA
IC= -500mA, IB= -50mA
Collector output Capacitance
Cob - - 8.5 pF VCB = -10V, IE = 0A, f=1MHz
Emitter input Capacitance
Cib - - 30 pF VEB = -0.5V, IC = 0A, f=1MHz
Transition Frequency
fT *
*Pulse test：Pulse Width ≦ 300 μs, Duty Cycle ≦ 2.0%.
150 -
- MHz VCE = -10V, IC = -20mA, f=100MHz
http://www.SeCoSGmbH.com/
29-Dec-2010 Rev. A
Any changes of specification will not be informed individually.
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